Role of TbFe on Perpendicular Magnetic Anisotropy and Giant Magnetoresistance Effect in [Co/Ni](N)-Based Spin Valves.

Role of TbFe on Perpendicular Magnetic Anisotropy and Giant Magnetoresistance Effect in [Co/Ni](N)-Based Spin Valves.
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TbFe 对 [Co/Ni]N 基自旋阀垂直磁各向异性和巨磁阻效应的作用

DOI:
10.1007/s40820-014-0009-1
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发表时间:
2014
期刊:
影响因子:
26.6
通讯作者:
Jin Q
Jin Q
中科院分区:
材料科学1区
文献类型:
--
作者:
Tang M;Zhang Z;Zhu Y;Ma B;Jin Q

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交换耦合[Co/Ni]N/TbFe纳米磁性薄膜具有很强的垂直磁各向异性(PMA),且PMA与Tb:Fe组分比、TbFe层厚度和[Co/Ni] N多层膜的重复次数有关。由[Co/Ni] 3自由多层膜和[Co/Ni]5/TbFe参考多层膜组成的纳米尺度的超导自旋阀显示出6.5%的高巨磁电阻(GMR)信号和超过3 kOe的大的开关场差。然而,意想不到的倾斜的自由层磁化,伴随着降低的GMR比,被发现是由一个厚的富铁,甚至薄的,但富Tb的TbFe层的存在下引起的。我们把这种现象归因于TbFe的大磁致伸缩效应,它可能会引起作用在自由层上的强应力,从而降低其界面PMA。
The exchange-coupled [Co/Ni]N/TbFe nano-magnetic films can display strong perpendicular magnetic anisotropy (PMA) which depends on the Tb:Fe component ratio, TbFe layer thickness and the repetition number N of [Co/Ni]Nmultilayer. Perpendicular spin valves in the nano thickness scale, consisting of a [Co/Ni]3free and a [Co/Ni]5/TbFe reference multilayer, show high giant magnetoresistance (GMR) signal of 6.5 % and a large switching field difference over 3 kOe. However, unexpected slanting of the free layer magnetization, accompanied by a reduced GMR ratio, was found to be caused by the presence of a thick Fe-rich or even a thin but Tb-rich TbFe layer. We attribute this phenomenon to the large magnetostriction effect of TbFe which probably induces strong stress acting on the free layer and hence reduces its interfacial PMA.
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