A magnetron sputtering technique to prepare a-C:H films: Effect of substrate bias
A magnetron sputtering technique to prepare a-C:H films: Effect of substrate bias
复制标题
磁控溅射技术制备 a-C:H 薄膜：衬底偏压的影响
DOI：
10.1016/j.apsusc.2010.09.040
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发表时间：
2011
影响因子：
6.7
通讯作者：
Li Hongxuan
中科院分区：
文献类型：
--
作者：
Ye Yinping;Ji Li;Zhou Huidi;Wang Yongxia;Chen Jianmin;Li Hongxuan
采用磁控溅射法，在Ar和CH 4混合气体中沉积了非晶碳氢（a-C：H）薄膜。与常规沉积工艺相比，该方法制备的a-C：H薄膜具有较低的内应力（<1GPa）。采用多种技术研究了衬底偏压对薄膜的微观结构、表面形貌和力学性能的影响。研究发现，在低偏压（− 100 V）下，a-C：H薄膜主要为类聚合物结构，而在高偏压（− 300 V）下，a-C：H薄膜主要为类金刚石结构，具有最高的硬度和内应力。随着偏压的进一步增加，类金刚石结构特征减弱，石墨化程度增加。摩擦试验表明，a-C：H薄膜的摩擦系数和磨损率与薄膜的结构和力学性能密切相关，而薄膜的结构和力学性能又受沉积方法和偏压的影响。
Amorphous hydrogenated carbon (a-C:H) films were deposited by magnetron sputtering with a mixture gas of Ar and CH4. The a-C:H films deposited by this method have relatively low internal stress (<1GPa) compared to some films deposited by conventional deposition process. The effects of substrate bias voltage on microstructure, surface morphology and mechanical properties of the films were investigated by various techniques. It has been found that the polymer-like structure is dominated at low bias voltage (−100V), while the diamond-like structure with the highest hardness and internal stress is the main feature of the a-C:H films deposited under high bias voltage (−300V). With increasing the bias voltage further, the feature of diamond-like structure decreases associating with the increase of graphitization. The frictional test shows that the friction coefficient and wear rate of the a-C:H films are depended strongly on structure and mechanical properties, which were ultimately influenced by the deposition method and bias voltage.
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影响因子：
4.1
作者：
K. Clay;S. Speakman;N. Morrison;N. Tomozeiu;W. Milne;A. Kapoor
通讯作者：
K. Clay;S. Speakman;N. Morrison;N. Tomozeiu;W. Milne;A. Kapoor
影响因子：
3.7
作者：
Ferrari, AC;Robertson, J
通讯作者：
Robertson, J
影响因子：
4.1
作者：
Grill, A
通讯作者：
Grill, A
影响因子：
4.1
作者：
M. Veres;M. Koós;I. Pócsik
通讯作者：
M. Veres;M. Koós;I. Pócsik
影响因子：
4.1
作者：
M. Śmietana;J. Szmidt;M. Korwin-Pawlowski;N. Miller;A. Elmustafa
通讯作者：
M. Śmietana;J. Szmidt;M. Korwin-Pawlowski;N. Miller;A. Elmustafa