Large Rashba spin splitting of a metallic surface-state band on a semiconductor surface.
Large Rashba spin splitting of a metallic surface-state band on a semiconductor surface.
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DOI：
10.1038/ncomms1016
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发表时间：
2010-05-17
影响因子：
16.6
通讯作者：
Aruga, Tetsuya
中科院分区：
文献类型：
--
作者：
Yaji, Koichiro;Ohtsubo, Yoshiyuki;Hatta, Shinichiro;Okuyama, Hiroshi;Miyamoto, Koji;Okuda, Taichi;Kimura, Akio;Namatame, Hirofumi;Taniguchi, Masaki;Aruga, Tetsuya
在室温下产生自旋极化电子是发展半导体自旋电子应用的重要步骤。为此，我们用角分辨光电子能谱(ARPES)、自旋分辨光电子能谱(ARPES)和第一性原理电子结构计算方法研究了Ge(111)表面的电子态。我们证明了以Pb6p为主要特征的金属表面态能带在费米能级上表现出大的拉什巴自旋分裂，其有效质量为0.028 meV。这一发现为半导体表面自旋输运/积累这一新颖的场提供了物质基础。表面态的电荷密度分析表明，铅原子核附近的非对称电荷分布导致了较大的自旋分裂。半导体自旋电子学的应用要求材料能够在保持大量载流子的同时表现出大的自旋分裂。Yaji和他的同事证明，在室温下，使用覆盖有铅单分子膜的锗表面，这是可能的。
The generation of spin-polarized electrons at room temperature is an essential step in developing semiconductor spintronic applications. To this end, we studied the electronic states of a Ge(111) surface, covered with a lead monolayer at a fractional coverage of 4/3, by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES and first-principles electronic structure calculation. We demonstrate that a metallic surface-state band with a dominant Pb 6p character exhibits a large Rashba spin splitting of 200 meV and an effective mass of 0.028 me at the Fermi level. This finding provides a material basis for the novel field of spin transport/accumulation on semiconductor surfaces. Charge density analysis of the surface state indicated that large spin splitting was induced by asymmetric charge distribution in close proximity to the nuclei of Pb atoms. Semiconductor spintronics applications require materials that can exhibit large spin-splitting while preserving a large number of carriers. Yaji and co-workers show this is possible at room temperature using a germanium surface covered with a lead monolayer.
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