On-Chip Detection of Process Shift and Process Spread for Silicon Debugging and Model-Hardware Correlation
On-Chip Detection of Process Shift and Process Spread for Silicon Debugging and Model-Hardware Correlation
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用于芯片调试和模型硬件关联的工艺偏移和工艺扩展的片上检测
DOI：
10.1109/ats.2012.66
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
H. Onodera
中科院分区：
文献类型：
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作者：
Islam A. K. M. Mahfuzul;H. Onodera
本文提出使用ROS(Ring Oscillator)进行工艺漂移和工艺扩展检测，用于硅调试和模型-硬件关联。ROS设计为对nMOSFET或pMOSFET的变化敏感，因此可以直接从RO测量中检测到芯片在工艺空间中的位置。测试芯片在65 nm工艺中的测量结果表明了所提出的ROS的有效性。从测试芯片测量中提取关键工艺参数的工艺漂移量和工艺扩散量，如阈值电压和栅极长度。
This paper proposes the use of ROs (Ring Oscillators) for process shift and process spread detection for silicon debugging and model-hardware correlation. ROs are designed to be sensitive to either nMOSFET orpMOSFET variation, thus the location of the chip in the process spacecan be detected directly from the RO measurements. Test chip measurements in a 65-nm process shows the validity of the proposed ROs. Amounts of process shift and process spread for key process parameters as threshold voltages and gate length are extracted from test chip measurements.
用于估计芯片间工艺变异性的工艺敏感监控电路
DOI：
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发表时间：
2010
期刊：
影响因子：
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作者：
A.K.M. Mahfuzul Islam;Akira Tsuchiya;Kazutoshi Kobayashi;Hidetoshi Onodera
通讯作者：
Hidetoshi Onodera