Effect of sputtered Cu film’s diffusion barrier on the growth and field emission properties of carbon nanotubes by chemical vapor deposition
Effect of sputtered Cu film’s diffusion barrier on the growth and field emission properties of carbon nanotubes by chemical vapor deposition
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溅射铜膜扩散势垒对化学气相沉积碳纳米管生长及场发射性能的影响
DOI：
10.1007/s00339-007-4333-x
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
Zhuo Sun
中科院分区：
文献类型：
--
作者：
Lili Wang;Ting Chen;T. Feng;Yiwei Chen;W. Que;Lifeng Lin;Zhuo Sun
在玻璃衬底上生长具有良好场发射性能的碳纳米管薄膜对于低成本场发射显示器的应用具有重要意义。除了Ni、Co和Fe之外，Cu可以是玻璃上CNT生长的良好催化剂，但是由于扩散到SiO2中，难以控制CNT的密度和均匀性。本文采用直流磁控溅射法在玻璃上沉积了四层金属阻挡层（W，Ni，Cr，Ti）来抑制Cu的扩散。生长的碳纳米管薄膜表现出各种形态与使用不同的障碍金属。只有在Ti/Cu和W/Cu上才能合成出分布均匀、结晶性较好的碳纳米管。电压电流测量表明，更好的场发射性能的碳纳米管薄膜可以得到钛和钨阻挡铜，而铬和镍是不合适的障碍候选人的铜在CNT-FED应用，因为降低的发射性能。
Growth of carbon nanotube (CNT) films with good field emission properties on glass is very important for low cost field emission display (FED) applications. In addition to Ni, Co and Fe, Cu can be a good catalyst for CNT growth on glass, but due to diffusion into SiO2it is difficult to control the CNTs density and uniformity. In this paper, four metal barrier layers (W, Ni, Cr, Ti) were deposited by dc magnetron sputtering on glass to reduce the Cu diffusion. As-grown CNT films showed various morphologies with the use of different barrier metals. CNTs with uniform distribution and better crystallinity can be synthesized only on Ti/Cu and W/Cu. Voltage current measurements indicate that better field emission properties of CNT films can be obtained on titanium and tungsten barriered Cu, while chromium and nickel are not suitable barrier candidates for copper in CNT-FED applications because of the reduced emission performance.
影响因子：
4
作者：
Choi, YC;Shin, YM;Kim, JM
通讯作者：
Kim, JM
影响因子：
3.3
作者：
A. Cassell;J. Raymakers;J. Kong;H. Dai
通讯作者：
A. Cassell;J. Raymakers;J. Kong;H. Dai