Effects of deposition temperature and time on HfC nanowires synthesized by CVD on SiC-coated C/C composites
Effects of deposition temperature and time on HfC nanowires synthesized by CVD on SiC-coated C/C composites
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沉积温度和时间对SiC涂层C/C复合材料CVD合成HfC纳米线的影响
DOI：
10.1016/j.ceramint.2015.12.078
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发表时间：
2016-04
影响因子：
5.2
通讯作者：
Li Hejun
中科院分区：
文献类型：
--
作者：
Ren Jincui;Zhang Yulei;Li Jinhua;Tian Song;Fei Tian;Li Hejun
以HfCl 4-CH 4-H2为反应体系，采用催化剂辅助化学气相沉积（CVD）法在SiC包覆的碳/碳复合材料上制备了HfC纳米线。研究了沉积温度（1273、1323、1373和1423 K）和沉积时间（20、40、60和90 min）对HfC纳米线形成和微观结构的影响。结果表明：HfC纳米线的直径随着沉积温度的升高而增大; HfC纳米线薄膜的密度和厚度随着沉积时间的延长而增大。HfC纳米线的生长遵循底部型气液固（VLS）机制。
HfC nanowires were synthesized on SiC-coated carbon/carbon composites via a catalyst-assisted chemical vapor deposition (CVD) process from the HfCl4–CH4–H2system. The effects of deposition temperature (1273, 1323, 1373 and 1423 K) and time (20, 40, 60 and 90 min) on the formation and microstructure of HfC nanowires were investigated. The results showed that the diameter of HfC nanowires increased with the deposition temperature increasing; both the density and thickness of HfC nanowire films increased with the deposition time prolonging. The growth of HfC nanowires followed the bottom-type vapor–liquid–solid (VLS) mechanism.
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