Tellurium doped a-Se devices for improved optical absorption in indirect x-ray photodetection
Tellurium doped a-Se devices for improved optical absorption in indirect x-ray photodetection
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掺碲 a-Se 器件可改善间接 X 射线光电检测中的光吸收
DOI：
10.1117/12.2613150
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Abbaszadeh, Shiva
中科院分区：
文献类型：
--
作者：
Hellier, Kaitlin;Benard, Emmie;Abbaszadeh, Shiva
非晶态硒(a-Se)是一种高增益、低暗电流、大面积兼容的光导体，在医学成像的紫外光和X射线探测器的发展中受到了极大的关注。由于a-Se在该区域的高衰减系数，使用a-Se的间接探测器通常具有蓝色发射闪烁体。然而，闪烁体的发射尾常落在a-Se的转换范围之外，发射峰不在Se吸收范围之外的闪烁体不能被利用。为了提高a-Se间接探测器的灵敏度和增益，我们建议在a-Se中掺入Te作为深度的函数，在初始Se层的初级吸收后，尾部发射将被较低带隙的Ase/Te吸收。此外，我们采用了横向器件结构，以避免来自透明电极或阻挡层的任何短波长吸收。在这项工作中，我们介绍了制造这些器件的第一步。用瞬时光电流飞行时间技术研究了掺杂a-Se/Te器件中的电荷输运。我们报道了a-Se1-xTex(x=0，0.01，0.05，0.10)的空穴和电子迁移率随外加电压的变化，以及带隙，并与以前的研究进行了比较。讨论了带和不带光缝的横向器件的制作。
Amorphous selenium (a-Se) is a high gain, low dark current, large area compatible photoconductor that has received significant attention towards the development of UV and X-ray detectors for medical imaging. Indirect detectors utilizing a-Se often feature blue emitting scintillators due to the high attenuation coefficient of a-Se in that region. However, emission tails from the scintillators often fall out of the conversion range of a-Se, and scintillators with emission peaks outside the absorption of Se cannot be utilized. In order to improve the sensitivity and gain in a-Se indirect detectors, we propose doping a-Se with tellurium as a function of depth, where tail emission will be absorbed by the lower bandgap aSe/Te after primary absorption in the initial Se layer. In addition, we employ a lateral device structure to avoid any absorption at short wavelengths from a transparent electrode or blocking layer. In this work, we present the first steps towards fabricating these devices. Studies of charge transport in doped a-Se/Te devices are performed using the transient photocurrent time-of-flight technique. We report hole and electron mobilities for a-Se1-xTex(x = 0, 0.01, 0.05, 0.10) as a function of applied voltage, along with band gaps and comparisons to previous studies. Fabrication of lateral devices, with and without optical slits, is demonstrated and discussed.
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影响因子：
7
作者：
LaBella, Andy;Stavro, Jann;Goldan, Amir H.
通讯作者：
Goldan, Amir H.
硫族化物半导体中的载流子捕获
DOI：
--
发表时间：
1991
期刊：
影响因子：
--
作者：
B. Polischuk;S. Kasap;Viswanath Aiyah;D. Scansen;A. Bekirov
通讯作者：
A. Bekirov
掺碲非晶硒光电导靶材厚度对雪崩特性的依赖性
DOI：
--
发表时间：
2009
期刊：
影响因子：
--
作者：
W. Park;K. Tanioka
通讯作者：
K. Tanioka
无定形 AsSeTe 中的漂移迁移率
DOI：
--
发表时间：
1979
期刊：
影响因子：
--
作者：
Takashi Takahashi
通讯作者：
Takashi Takahashi
非晶 Se-Te 合金的电学和光学研究
DOI：
10.1088/0022-3727/25/12/017
发表时间：
1992
期刊：
Journal of Physics D
影响因子：
--
作者：
K. Reddy;A. Bhatnagar
通讯作者：
A. Bhatnagar