Investigation of Au/Si Eutectic Wafer Bonding for MEMS Accelerometers
Investigation of Au/Si Eutectic Wafer Bonding for MEMS Accelerometers
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DOI：
10.3390/mi8050158
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发表时间：
2017-05-15
期刊：
影响因子：
3.4
通讯作者：
Wen Z
中科院分区：
文献类型：
--
作者：
Li D;Shang Z;She Y;Wen Z
Au/Si eutectic bonding is considered to BE a promising technology for creating 3D structures and hermetic packaging in micro-electro-mechanical system (MEMS) devices. However, it suffers from the problems of a non-uniform bonding interface and complex processes for the interconnection of metal wires. This paper presents a novel Au/Si eutectic wafer bonding structure and an implementation method for MEMS accelerometer packaging. The related processing parameters influencing the Au/Si eutectic bonding quality were widely investigated. It was found that a high temperature of 400 °C with a low heating/cooling rate of 5 °C/min is crucial for successful Au/Si eutectic bonding. High contact force is beneficial for bonding uniformity, but the bonding strength and bonding yield decrease when the contact force increases from 3000 to 5000 N due to the metal squeezing out of the interface. The application of TiW as an adhesion layer on a glass substrate, compared with a commonly used Cr or Ti layer, significantly improves the bonding quality. The bonding strength is higher than 50 MPa, and the bonding yield is above 90% for the presented Au/Si eutectic bonding. Furthermore, the wafer-level vacuum packaging of the MEMS accelerometer was achieved based on Au/Si eutectic bonding and anodic bonding with one process. Testing results show a nonlinearity of 0.91% and a sensitivity of 1.06 V/g for the MEMS accelerometer. This Au/Si eutectic bonding process can be applied to the development of reliable, low-temperature, low-cost fabrication and hermetic packaging for MEMS devices.
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影响因子：
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作者：
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通讯作者：
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DOI：
10.1631/jzus.c12mnt02
发表时间：
2013-04-01
影响因子：
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作者：
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通讯作者：
Wen, Zhi-yu
影响因子：
4.6
作者：
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通讯作者：
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影响因子：
4.6
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通讯作者：
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DOI：
10.1016/j.mseb.2012.09.005
发表时间：
2012-12-01
影响因子：
3.6
作者：
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通讯作者：
Ivey, Douglas G.