Sensitive metallic behavior in epitaxial NiCo2O4 films regulated by the film thickness
Sensitive metallic behavior in epitaxial NiCo2O4 films regulated by the film thickness
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外延 NiCo2O4 薄膜的敏感金属行为受薄膜厚度的调节
DOI：
10.1016/j.jpcs.2021.110321
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发表时间：
2022
影响因子：
4
通讯作者：
Denglu Hou
中科院分区：
文献类型：
--
作者：
Chunfang Wu;Congmian Zhen;Xiaozhe Zhang;Xiaoshan Xu;Jingtong Xie;Li Ma;Dewei Zhao;Denglu Hou
过渡金属氧化物NiCo 2 O 4由于其金属导电性而引起了广泛的研究兴趣，但其导电性的确切性质至今仍不清楚。在这项研究中，在NiCo 2 O 4外延膜的金属行为对温度和膜厚度的依赖性进行了研究，膜厚度在7-155 nm的范围内。我们的研究结果表明，一个微妙的晶格畸变所造成的基板是必要的NiCo 2 O 4薄膜的金属行为。对于31 nm厚的NiCo 2 O 4膜，获得了金属行为的最宽温度窗口。厚度小于31 nm的NiCo 2 O 4薄膜为准二维薄膜，且受衬底夹持的影响。在这些薄膜中，传导受到电子-电子和电子-磁振子散射的限制。然而，NiCo 2 O 4薄膜厚度超过31 nm是三维的，表现出长程结构秩序，与电输运主要受电子-声子散射，以及电子-电子和电子-磁振子散射。研究结果表明，NiCo 2 O 4薄膜的金属行为可以通过薄膜厚度进行调节，这对于NiCo 2 O 4在磁性隧道结铁电电极中的应用具有重要意义.
The transition metal oxide NiCo2O4has aroused extensive research interest due to its metallic conductivity, but the precise nature of the conductivity remains elusive. In this study, the dependence of the metallic behavior in NiCo2O4epitaxial films on temperature and film thickness are investigated for film thicknesses in the range of 7–155 nm. Our results show that a subtle lattice distortion caused by the substrate is necessary for metallic behavior in NiCo2O4films. The widest temperature window for the metallic behavior is obtained for a 31-nm thick NiCo2O4film. The NiCo2O4films thinner than 31 nm are quasi-two-dimensional, and are affected by substrate clamping. In these films, conduction is constrained by electron–electron and electron–magnon scattering. However, NiCo2O4films thicker than 31 nm are three-dimensional, exhibiting long-range structural order, with electrical transport constrained mainly by electron–phonon scattering, as well as electron–electron and electron–magnon scattering. Our study demonstrates that the metallic behavior in NiCo2O4films can be tuned using the film thickness, which is of great significance for application of NiCo2O4in development of alternative ferroelectric metal electrodes in magnetic tunnel junctions.
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影响因子：
3.7
作者：
Snyder, GJ;Hiskes, R;Geballe, TH
通讯作者：
Geballe, TH
大型单个 NiCo2O4 纳米板的电传输特性
影响因子：
19
作者：
Hu, Linfeng;Wu, Limin;Fang, Xiaosheng
通讯作者：
Fang, Xiaosheng
影响因子：
4
作者：
Silwal, Punam;Miao, Ludi;Kim, Dae Ho
通讯作者：
Kim, Dae Ho
DOI：
10.1063/1.881139
发表时间：
1985-04
期刊：
The Quantum Nature of Materials
影响因子：
--
作者：
B. L. Al'tshuler;P. Lee
通讯作者：
B. L. Al'tshuler;P. Lee
影响因子：
3.7
作者：
Mellinger, Corbyn;Waybright, Jace;Xu, Xiaoshan
通讯作者：
Xu, Xiaoshan