Structure stability of few-layer graphene under high electric field
Structure stability of few-layer graphene under high electric field
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高电场下少层石墨烯的结构稳定性
DOI：
10.1016/j.carbon.2018.12.022
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发表时间：
2019-04
期刊：
影响因子：
10.9
通讯作者：
Deng Shaozhi
中科院分区：
文献类型：
--
作者：
Tang Shuai;Zhang Yu;Xu Ningsheng;Zhao Peng;Zhan Runze;Chen Jun;Deng Shaozhi
材料结构的稳定性是决定其使用能力和寿命的关键因素。利用原位透射电镜直接观察了垂直少层石墨烯（FLG）在强电场作用下的结构演变。FLG的结构稳定性取决于其结晶度和边缘形态。无针孔缺陷的垂直FLG可承受58.5 V/nm以上的静电场。具有针孔缺陷的垂直FLG由于场蒸发从上到下崩解，临界静电场减弱至17.4 V/nm。垂直于电场的卷曲层的垂直FLG由于层滑动而在边缘拉伸和滑动，其临界断裂静电场低至7.5 V/nm，比平行于静电场的卷曲层的24.7 V/nm小一个数量级。这些结果是首次直接观察到高电场作用下FLG的纳米结构演变。这有助于理解FLG在自由空间强电场作用下的劣化机理，为场电子发射器和扫描隧道显微镜等强电场应用提供指导。
The stability of material structure is the key factor to determine its service capacity and lifetime. The structure evolution of vertical few-layer graphene (FLG) under high electric field was directly observed in situ TEM. The structure stability of FLG depends on its crystallinity and edge morphology. The vertical FLG without pinhole defects can sustain an electrostatic field beyond 58.5 V/nm. The vertical FLG with pinhole defects disintegrated from top to bottom due to field evaporation and the critical electrostatic field weaken to 17.4 V/nm. The vertical FLG with curly layer perpendicular to the electric field stretched and slid at the edge due to the layer sliding and the critical fracture electrostatic field of it was low to 7.5 V/nm which is an order of magnitudes small than that of the curly layer parallel to the electrostatic field of 24.7 V/nm. Those results were the first direct observation of the nano-structure evolution of FLG under high electric field. It helps to understand the deterioration mechanism of FLG under high electric field in free space and provides guidance for the high electric field applications such as field electron emitter and scanning tunneling microscopy.
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影响因子：
10.8
作者：
Balandin, Alexander A.;Ghosh, Suchismita;Lau, Chun Ning
通讯作者：
Lau, Chun Ning
影响因子：
10.9
作者：
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影响因子：
17.1
作者：
Xiao, Zhiming;She, Juncong;Xu, Ningsheng
通讯作者：
Xu, Ningsheng
影响因子：
3.2
作者：
SOULE, DE;NEZBEDA, CW
通讯作者：
NEZBEDA, CW
影响因子：
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作者：
Bolotin, K. I.;Sikes, K. J.;Stormer, H. L.
通讯作者：
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