Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction
Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction
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(Ga,Mn)As 磁隧道结中电流感应磁化翻转的脉冲宽度和磁场依赖性
DOI：
10.1063/1.2170063
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发表时间：
2006
影响因子：
3.2
通讯作者：
H. Ohno
中科院分区：
文献类型：
--
作者：
D. Chiba;T. Kita;F. Matsukura;H. Ohno
本文研究了（Ga，Mn）As闪烁GaAs（Ga，Mn）As磁性隧道结中电流感生磁化翻转的脉宽和磁场依赖性。在10 ~ 1000 μs范围内，临界磁化翻转电流与脉宽呈线性关系。磁场的依赖性似乎表明，所观察到的电流诱导的磁化切换通过亚稳磁化结构进行。
We have investigated the pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As∕GaAs∕(Ga,Mn)As magnetic tunnel junction. Critical current to induce magnetization switching shows a linear dependence on pulse width from 10to1000μs. The magnetic-field dependence appears to indicate that the observed current-induced magnetization switching proceeds through metastable magnetization structures.
影响因子：
8.6
作者：
Chiba, D;Sato, Y;Ohno, H
通讯作者：
Ohno, H