Field modulation in bilayer graphene band structure
Field modulation in bilayer graphene band structure
复制标题
双层石墨烯能带结构的场调制
DOI：
10.1088/0953-8984/21/10/102202
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
E. Kan
中科院分区：
文献类型：
--
作者：
H. Raza;E. Kan
使用外部电场，可以通过破坏A对称性来调制Bernal堆叠双层石墨烯的带隙。我们使用扩展的Hückel理论分析了双层石墨烯上的应变效应，发现层间距离的减小会导致更高的带隙调制，正如预期的那样。此外，高于约2.5 μ m的层间距离，带隙是直接的，遵循与电场的凸关系，并饱和到由层间距离确定的值。然而，低于约2.5 μ m时，带隙是间接的，趋势变为凹的，并且观察到阈值电场，其也取决于堆叠距离。
Using an external electric field, one can modulate the band gap of Bernal stacked bilayer graphene by breaking the A– symmetry. We analyze strain effects on the bilayer graphene using the extended Hückel theory and find that reduced interlayer distance results in higher band gap modulation, as expected. Furthermore, above about 2.5 Å interlayer distance, the band gap is direct, follows a convex relation with the electric field and saturates to a value determined by the interlayer distance. However, below about 2.5 Å, the band gap is indirect, the trend becomes concave and a threshold electric field is observed, which also depends on the stacking distance.
影响因子：
56.9
作者：
Ohta, Taisuke;Bostwick, Aaron;Rotenberg, Eli
通讯作者：
Rotenberg, Eli