Reliability and Reliability Testing
Reliability and Reliability Testing
复制标题
可靠性及可靠性测试
DOI：
10.1007/978-3-319-70917-8_12
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
R. D. Doncker
中科院分区：
文献类型：
--
作者：
J. Lutz;H. Schlangenotto;U. Scheuermann;R. D. Doncker
电力电子器件和元件的可靠性在前面的章节中已经多次提到。它非常重要，因为它是应用性能的先决条件：可靠性是系统或组件在规定条件下在指定时间内执行其所需功能的能力[SAE 08]。电力电子系统的要求寿命很少低于10年，最长可达30年。以下章节将详细讨论的可靠性测试是在30多年的使用硅器件技术的功率封装经验中开发和建立的。随着SiC和GaN等宽带隙器件的日益成熟，显然应该对配备这些新型器件技术的模块应用相同的测试程序，因为应用将需要相当的可靠性水平。然而，宽带隙器件相对于已建立的Si器件表现出特定的差异，这在可靠性测试中必须加以考虑。这些特殊要求将在相关章节中讨论。
The reliability of power electronic devices and components has been mentioned several times in the previous chapters. It is so important, because it is a prerequisite for the performance in applications: Reliability is the ability of a system or component to perform its required functions under stated conditions for a specified period of time [SAE08]. The requested lifetime of power electronics systems is seldom below 10 years and can reach up to 30 years. The reliability tests that will be discussed in detail in the following sections have been developed and established during more than 30 years of experience on power packages with implemented Si device technology. With the growing maturity of wide bandgap devices like SiC and GaN, it seems obvious that the same test procedures should be applied to modules equipped with these novel device technologies, since applications will require a comparable reliability level. However, wide bandgap devices exhibit specific differences with respect to the established Si devices, which have to be taken into account in reliability testing. These special requirements will be discussed in the respective sections.
DOI：
10.1109/tdmr.2012.2235836
发表时间：
2013-03
影响因子：
2
作者：
Li Yang-;P. Agyakwa;C. M. Johnson
通讯作者：
Li Yang-;P. Agyakwa;C. M. Johnson