How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation
How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation
复制标题
如何解决电子束蒸发过程中电子和带电金属原子发射引起的微纳加工问题
DOI:
10.1088/1361-6463/abe89b
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发表时间:
2021
期刊:
影响因子:
--
通讯作者:
B. Beschoten
中科院分区:
文献类型:
--
作者:
F. Volmer;I. Seidler;T. Bisswanger;J.-S. Tu;L.R. Schreiber;C. Stampfer;B. Beschoten
We discuss how the emission of electrons and ions during electron-beam-induced physical vapor deposition can cause problems in micro-and nanofabrication processes. After giving a short overview of different types of radiation emitted from an electron-beam (e-beam) evaporator and how the amount of radiation depends on different deposition parameters and conditions, we highlight two phenomena in more detail: First, we discuss an unintentional shadow evaporation beneath the undercut of a resist layer caused by the one part of the metal vapor which got ionized by electron-impact ionization. These ions first lead to an unintentional build-up of charges on the sample, which in turn results in an electrostatic deflection of subsequently incoming ionized metal atoms toward the undercut of the resist. Second, we show how low-energy secondary electrons during the metallization process can cause cross-linking, blisters, and bubbles in the respective resist layer used for defining micro-and nanostructures in an e-beam lithography process. After the metal deposition, the cross-linked resist may lead to significant problems in the lift-off process and causes leftover residues on the device. We provide a troubleshooting guide on how to minimize these effects, which eg includes the correct alignment of the e-beam, the avoidance of contaminations in the crucible and, most importantly, the installation of deflector electrodes within the evaporation chamber.
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