Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
复制标题
基于等离子体的原位表面清洗程序对 HfO2/In0.53Ga0.47As 栅极堆叠性能的影响
DOI：
10.1063/1.4825259
复制
发表时间：
2013
影响因子：
3.2
通讯作者：
S. Stemmer
中科院分区：
文献类型：
--
作者：
V. Chobpattana;T. Mates;W. Mitchell;J. Zhang;S. Stemmer
本文报道了氮等离子体和三甲基铝交替循环的原位表面清洗过程中工艺参数的变化对原子层沉积在n-In0.53Ga0.47As上的高尺度HfO2栅极电介质的界面陷阱密度的影响。我们讨论了沉积前暴露于氮等离子体/三甲基铝循环所产生的堆的界面化学。界面阱密度、界面化学和表面形貌的测量表明，清洗过程的变化对成核和表面覆盖有很大的影响，这反过来又对实现低界面态密度至关重要。
We report on the influence of variations in the process parameters of an in-situ surface cleaning procedure, consisting of alternating cycles of nitrogen plasma and trimethylaluminum dosing, on the interface trap density of highly scaled HfO2 gate dielectrics deposited on n-In0.53Ga0.47As by atomic layer deposition. We discuss the interface chemistry of stacks resulting from the pre-deposition exposure to nitrogen plasma/trimethylaluminum cycles. Measurements of interface trap densities, interface chemistry, and surface morphology show that variations in the cleaning process have a large effect on nucleation and surface coverage, which in turn are crucial for achieving low interface state densities.
III-V族氧化物界面处的界面缺陷的钝化
DOI：
10.1116/1.4710513
发表时间：
2012
期刊：
Materials, Processing, Measurement, and Phenomena
影响因子：
--
作者：
Lin L
通讯作者：
Lin L