Defect control based on constitutional supercooling effect in cast multicrystalline silicon: Boron-indium co-doping
Defect control based on constitutional supercooling effect in cast multicrystalline silicon: Boron-indium co-doping
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基于铸造多晶硅组织过冷效应的缺陷控制：硼-铟共掺杂
DOI：
10.1016/j.solmat.2019.110189
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发表时间：
2019-12
影响因子：
6.9
通讯作者：
Yang Deren
中科院分区：
文献类型：
--
作者：
Yuan Shuai;Yu Xuegong;Hu Dongli;Luo Hongzhi;Zhu Xiaodong;Xu Yunfei;He Liang;Chen Hongrong;Yang Deren
研究了成分过冷(CS)对铸造多晶硅(MC-Si)材料晶粒结构的影响。由于铟具有较低的平衡分凝系数，因此选择铟作为CS掺杂，可以在较低的掺杂浓度下获得CS效应。制备了工业In(In)掺杂G2和B-In(B-In)共掺杂G5晶种辅助多晶硅(MC-Si)铸锭并进行了表征。通过调节In的掺杂量，可以分别获得自核晶和外延晶。共掺钢锭中存在成分过冷相关缺陷(CSD)，并能抑制位错型缺陷的生长和扩展。结果表明，B-In共掺杂MC-Si晶片的总体有害缺陷密度较基准B掺杂晶片有较大幅度的降低，平均太阳电池性能明显提高。
The impact of constitutional supercooling (CS) on the grain structure of cast multicrystalline silicon (mc-Si) materials was investigated. Indium impurity was chosen as the CS dopant because of its low equilibrium segregation coefficient so that CS effect could be obtained at relatively low doping concentration. Industrial indium (In) doped G2 and boron-indium (B–In) co-doped G5 seed-assisted multicrystalline silicon (mc-Si) ingots were fabricated and characterized. Self-nucleated grains and epitaxial grains could be obtained, respectively, as the result of tuning the doping amount of indium. Constitutional-supercooling-related defects (CSD) were found in the co-doped ingot and could suppress the growth and propagation of dislocation-type defects. As a result, the overall deleterious defect density of B–In co-doped mc-Si wafers was well reduced compared to that of referential B-doped wafers, and the average solar cell performance of B–In co-doped ingots was obviously enhanced.
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影响因子：
1.8
作者：
D.-C. Zhu;M. Liang;Meiling Huang;Zhaoyu Zhang;Xinming Huang
通讯作者：
D.-C. Zhu;M. Liang;Meiling Huang;Zhaoyu Zhang;Xinming Huang
影响因子：
1.8
作者：
K. Nakajima;K. Kutsukake;K. Fujiwara;K. Morishita;S. Ono
通讯作者：
K. Nakajima;K. Kutsukake;K. Fujiwara;K. Morishita;S. Ono
影响因子：
1.8
作者：
Huali Zhang;You Da;Chunlai Huang;Wu Yihua;Xu Yan;Wu Peng
通讯作者：
Huali Zhang;You Da;Chunlai Huang;Wu Yihua;Xu Yan;Wu Peng
影响因子：
3.2
作者：
K. Fujiwara
通讯作者：
K. Fujiwara
影响因子：
24.2
作者：
L. Katgerman
通讯作者：
L. Katgerman