Study of thin Film Formation From Silicon‐Containing Precursors Produced by an RF Non‐Thermal Plasma Jet at Atmospheric Pressure
Study of thin Film Formation From Silicon‐Containing Precursors Produced by an RF Non‐Thermal Plasma Jet at Atmospheric Pressure
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大气压下射频非热等离子体射流产生的含硅前驱体薄膜形成的研究
DOI：
10.1002/ctpp.201200043
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发表时间：
2012
影响因子：
1.6
通讯作者：
R. Hippler
中科院分区：
文献类型：
--
作者：
J. Schäfer;R. Foest;F. Sigeneger;D. Loffhagen;K. Weltmann;U. Martens;R. Hippler
本文从理论和实验两方面研究了利用射频激励等离子体射流通过大气压PECVD沉积有机硅薄膜的方法。静态沉积实验已经进行了使用含硅分子HMDSO，OMCTS和硅烷的平板聚合物和玻璃样品。根据功率、流速、操作条件和沉积速率对实验进行分类。沉积的膜已使用轮廓术和傅里叶变换红外光谱分析。据发现，电力和气体流量的稳定性确定独特的区域，其特征在于由沉积速率，轮廓形状和化学性质的膜取决于引入的前体的操作图。最高的O/Si比（接近2）被发现为层流制度。在这里，薄膜的特征也在于低碳含量。不同的流动条件下的实验结果进行了讨论的二维轴对称流体模型的结果。该模型预测的气体加热和流动的相互作用，等离子体产生的有效体积，运输的活性等离子体颗粒到流出物和前体片段的产生和运输朝向基板表面。一个显着的影响的气体流量上的等离子体动力学只观察到相对于分子氩离子的密度，这是运输到流出物中的电子一起。计算出的前体碎片到基底表面上的通量与测量的膜厚度曲线定性一致（© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
The deposition of thin silicon‐organic films by atmospheric pressure PECVD using an RF‐excited plasma jet has been investigated experimentally and theoretically. Static deposition experiments have been performed on flat polymer and glass samples using the silicon containing molecules HMDSO, OMCTS and silane. The experiments are classified with respect to power, flow rate, operating conditions and deposition rate. The deposited films have been analysed using profilometry and Fourier transform infrared spectroscopy. It is found that electric power and gas flow stability determine distinctive areas in the operating diagram characterized by the deposition rate, profile shape and the chemical properties of the film depending on introduced precursors. The highest O/Si ratio (close to two) is found for laminar flow regimes. Here, the films are characterized by a low carbon content, too. The experimental findings for different flow conditions are discussed in relation to results of a two‐dimensional axisymmetric fluid model. The model predicts the interaction of gas heating and flow, the plasma generation in the active volume, the transport of active plasma particles into the effluent and the generation and transport of precursor fragments towards the substrate surface. A remarkable influence of the gas flow on the plasma kinetics is observed only with respect to the density of molecular argon ions, which are transported together with electrons into the effluent. The calculated flux of precursor fragments onto the substrate surface agrees qualitatively with measured profiles of the film thickness (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
氦气和氩气同轴微等离子体射流的相分辨发射光谱
DOI：
10.1140/epjd/e2010-00246-9
发表时间：
2010
期刊：
The European Physical Journal D
影响因子：
--
作者：
J. Benedikt;S. Hofmann;N. Knake;H. Böttner;R. Reuter;A. von Keudell;V. Schulz-von der Gathen
通讯作者：
V. Schulz-von der Gathen