Improvement of Large Anomalous Hall Effect in Polycrystalline Antiferromagnetic Mn3+xSn Thin Films
Improvement of Large Anomalous Hall Effect in Polycrystalline Antiferromagnetic Mn3+xSn Thin Films
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多晶反铁磁Mn3 xSn薄膜中大反常霍尔效应的改进
DOI：
10.1109/tmag.2019.2899223
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发表时间：
2019
影响因子：
2.1
通讯作者：
Y. Ando
中科院分区：
文献类型：
--
作者：
T. Ikeda;M. Tsunoda;M. Oogane;Seungjun Oh;T. Morita;Y. Ando
为了改善Mn<sub> </sub>Sn薄膜中的大反常霍尔效应（AHE），我们通过改变成分消除了薄膜中共存的Mn<sub>2</sub>Sn相；采用溅射法在Si/SiO<sub>2</sub>衬底上制备了厚度为50 nm的多晶Mn<sub> +<italic>x</italic></sub>Sn薄膜。在沉积状态下，薄膜成分为Mn<sub >0 </sub>Sn<sub>30</sub>（样品- a）， Mn<sub>75</sub>Sn<sub>25</sub>（样品- b）， Mn<sub>80</sub>Sn<sub>20</sub>（样品-C）， 500℃退火后，分别为Mn<sub>75</sub>Sn<sub>25</sub>（样品- a）， Mn<sub>77</sub>Sn<sub>23</sub>（样品- b）， Mn<sub>78</sub>Sn<sub>22</sub>（样品-C）。从x射线衍射结构分析来看，样品C在300℃下结晶为Mn<sub> </sub>Sn相，未经过Mn<sub>2</sub>Sn相，与样品a不同。样品- a的饱和磁化强度<inline-formula> < text -math notation="LaTeX">$M_{\ mathm {S}}$ </ text -math></inline-formula>，在250 K以下显著升高，对应于Mn<sub>2</sub>Sn的居里温度。另一方面，<inline-formula> < text -math notation="LaTeX">$M_{\ mathm {S}}$ </ text -math></inline-formula>在样品- b和-C中随冷却温度的变化不明显。在室温下观察到所有样品的AHE。室温下的异常霍尔电导率<inline-formula> < text -math notation="LaTeX">$\sigma _{\ mathm {AH}}$ </ text -math></inline-formula>，随着Mn含量的增加而增大。<inline-formula> < text -math notation="LaTeX">$\sigma _{\ mathm {AH}}$ </ text -math></inline-formula>在样品- a中随冷却温度由负变为正。另一方面，在样本c中，符号仍然是负的。这些差异可能是由于Mn<sub>3</sub>Sn薄膜中共存的Mn<sub> </sub>Sn相消除了，从化学计量学上看Mn含量增加。因此，我们成功地改进了多晶反铁磁Mn<sub>3</sub>Sn薄膜中的大AHE。
In order to improve the large anomalous Hall effect (AHE) in Mn<sub>3</sub>Sn thin films, we eliminated the co-existing Mn<sub>2</sub>Sn phase in the films by changing the composition; 50 nm thick polycrystalline Mn<sub>3+<italic>x</italic></sub>Sn thin films were fabricated on Si/SiO<sub>2</sub> substrates by the sputtering method followed by a thermal annealing process in vacuum. The film compositions were Mn<sub>70</sub>Sn<sub>30</sub>(sample-A), Mn<sub>75</sub>Sn<sub>25</sub>(sample-B), and Mn<sub>80</sub>Sn<sub>20</sub>(sample-C) in as-deposited state and were slightly changed to be Mn<sub>75</sub>Sn<sub>25</sub>(sample-A), Mn<sub>77</sub>Sn<sub>23</sub>(sample-B), and Mn<sub>78</sub>Sn<sub>22</sub>(sample-C), respectively, after the annealing at 500 °C. From a structural analysis by X-ray diffractometry, the sample-C was considered to crystallize to Mn<sub>3</sub>Sn phase without passing the crystallization of Mn<sub>2</sub>Sn phase at 300 °C, differently from the sample-A. The saturation magnetization, <inline-formula> <tex-math notation="LaTeX">$M_{\mathrm {S}}$ </tex-math></inline-formula>, of the sample-A significantly increased below 250 K, corresponding with the Curie temperature of Mn<sub>2</sub>Sn. On the other hand, <inline-formula> <tex-math notation="LaTeX">$M_{\mathrm {S}}$ </tex-math></inline-formula> did not show significant changes with cooling temperature in the samples-B and -C. An AHE was observed at the room temperature in all the samples. The anomalous Hall conductivity, <inline-formula> <tex-math notation="LaTeX">$\sigma _{\mathrm {AH}}$ </tex-math></inline-formula>, at the room temperature increased in magnitude, as the content of Mn increased. The sign of <inline-formula> <tex-math notation="LaTeX">$\sigma _{\mathrm {AH}}$ </tex-math></inline-formula> changed from negative to positive in the sample-A with cooling temperature. On the other hand, the sign remained negative in the sample-C. These differences might be due to the elimination of co-existing Mn<sub>2</sub>Sn phase in the Mn<sub>3</sub>Sn thin films with enlarging the Mn content from the stoichiometry. Consequently, we successfully improved the large AHE in polycrystalline antiferromagnetic Mn<sub>3</sub>Sn thin films.
非共线反铁磁体 Mn3Sn 中的磁性 Weyl 费米子态
DOI：
--
发表时间：
2018
期刊：
影响因子：
--
作者：
Kenta Kuroda;T. Tomita;M. T. Suzuki;C. Bareille;A. A. Nugroho;P. Goswami;M. Ochi;M. Ikhlas;M. Nakayama;S. Akebi;R. Noguchi;N. Inami;K. Ono;H. Kumigashira;A. Varykhalov;T. Muro;T. Koretsune;R. Arita;S. Shin;T. Kondo;S. Nakatsuji
通讯作者：
S. Nakatsuji
影响因子：
8.6
作者：
Miyasato, T.;Abe, N.;Tokura, Y.
通讯作者：
Tokura, Y.
影响因子：
44.1
作者：
Nagaosa, Naoto;Sinova, Jairo;Ong, N. P.
通讯作者：
Ong, N. P.