In-plane topological p-n junction in the three-dimensional topological insulator Bi(2-x)Sb(x)Te(3-y)Se(y).
In-plane topological p-n junction in the three-dimensional topological insulator Bi(2-x)Sb(x)Te(3-y)Se(y).
复制标题
三维拓扑绝缘子BI（2-X）SB（X）TE（3-Y）SE（y）中的平面内拓扑P-N连接。
DOI：
10.1038/ncomms13763
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发表时间：
2016-12-09
影响因子：
16.6
通讯作者：
中科院分区：
文献类型：
--
作者：
拓扑p-n结（TPNJ）是控制三维拓扑绝缘体（3D-TIs）表面自旋和电荷输运的重要概念。本文报道了在3D-TI Bi2−xSbxTe3−ySey薄膜表面成功制备了这种TPNJ，并对电输运进行了实验观察。通过以四氟-7,7,8,8-四氰喹诺二甲烷为有机受体分子，调节Bi2 - xSbxTe3 - ySey的n型拓扑Dirac表面上半部分的化学势，可以将一半表面转化为p型，而将另一半表面转化为相反的n型，从而形成TPNJ。通过在场效应晶体管结构中扫过后门电压，TPNJ在底部和顶部表面都得到了控制。在TPNJ上观察到3D-TI薄膜上电输运的巨大变化，为未来的自旋电子学提供了3D-TI的新型自旋和电荷输运。狄拉克锥表面态纠正了一个超低耗散自旋和电荷电流，但尚未在器件中得到证实。在这里，Tu等人在Bi2−x Sb x Te3−y Se y薄膜中观察到一半表面p型电输运，另一半表面n型电输运，实现了拓扑p-n结。
A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi2−xSbxTe3−ySey thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi2−xSbxTe3−ySey on its top half by using tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics. Dirac cone surface states rectify an ultralow dissipative spin and charge current, but it is yet to be confirmed in devices. Here, Tu et al. observe p-type electrical transport on one half surface and n-type on the other in Bi2−x Sb x Te3−y Se y thin films, realizing a topological p-n junction.
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影响因子：
3.2
作者：
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通讯作者：
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影响因子：
3.7
作者：
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