Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots
Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots
复制标题
氮化物量子点电子和光学特性的紧束缚模型
DOI：
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
G. Czycholl
中科院分区：
文献类型：
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作者：
S. Schulz;D. Mourad;S. Schumacher;G. Czycholl
两个略有不同的，有效的紧束缚（TB）模型用于描述氮化物基半导体量子点（QD）的电子性质已经被开发并应用于这些结构的电子单粒子谱的计算。使用这些单粒子量子点态，可以计算偶极和库仑矩阵元，从中可以获得这些系统的光学性质。这些TB计算已经针对具有立方锌钛矿结构的氮化物基QD和具有纤锌矿晶体结构的氮化物基QD进行。在本文中，我们讨论了所使用的一般方法和获得的结果的电子单粒子的状态和能量，偶极子和库仑矩阵元，激子的光发射和吸收光谱。
Two slightly different, efficient tight‐binding (TB) models for the description of the electronic properties of nitride‐based semiconductor quantum dots (QDs) have been developed and applied to the calculation of the electronic one‐particle spectrum of these structures. Using these one‐particle QD‐states, dipole and Coulomb matrix elements can be calculated, from which the optical properties of these systems can be obtained. These TB calculations have been performed for nitride‐based QDs with a cubic zincblende structure and those with a wurtzite crystal structure. In this paper, we discuss the general methodology used and the results obtained for the electronic one‐particle states and energies, for the dipole and Coulomb matrix elements, and for the excitonic optical emission and absorption spectra.
影响因子：
1.8
作者：
M. Moram;S. Novikov;A. Kent;C. Nörenberg;C. T. Foxon;C. Humphreys
通讯作者：
M. Moram;S. Novikov;A. Kent;C. Nörenberg;C. T. Foxon;C. Humphreys