Modelling of partial basal dislocation dipoles in bilayer graphene and graphite

Modelling of partial basal dislocation dipoles in bilayer graphene and graphite
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双层石墨烯和石墨中部分基底位错偶极子的建模

DOI:
10.1016/j.carbon.2023.118613
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发表时间:
2024
期刊:
影响因子:
10.9
通讯作者:
Mouratidis P
Mouratidis P
中科院分区:
材料科学2区
文献类型:
--
作者:
Mouratidis P

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基底位错是双层石墨烯和石墨中最常见的位错类型,对于理解石墨的物理性质至关重要,因为它们在受损材料的塑性变形中起着至关重要的作用。在这项研究中,我们利用分子动力学计算研究双层石墨烯和石墨中的基底位错的性质。我们分析了单位长度的平坦和屈曲的部分基底位错的位错形成能,以及完整的基底位错的解离和屈曲。我们还研究了部分位错核心的宽度和形成能量,通过分析的原子错位和应变分布在错位的超晶胞。我们的研究结果表明,屈曲主要是由基底位错的边缘分量,它控制的程度,流体静力学应变垂直于位错线。最后,我们研究了错位多层超晶胞的屈曲,并探讨了这些结果与块状石墨的结构变形的关系。
Basal dislocations are the most common type of dislocation in bilayer graphene and graphite, and are critical to understanding the physics of graphite because they play a crucial role in the plastic deformation of damaged material. In this study, we utilise molecular dynamics calculations to investigate the properties of basal dislocations in bilayer graphene and graphite. We analyse the dislocation formation energy per unit length of flat and buckled partial basal dislocations, as well as the dissociation and buckling of perfect basal dislocations. We also examine the partial dislocation core widths and formation energies by analysing the atomic disregistry and strain distribution across dislocated supercells. Our findings suggest that buckling is primarily initiated by the edge component of basal dislocations, which controls the degree of hydrostatic strain perpendicular to the dislocation line. Finally, we investigate the buckling of dislocated multilayer supercells and explore how these results relate to the structural deformation of bulk graphite.
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发表时间: 2021-03
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