An IGBT Current Boosting Method by Using Ultrahigh Driving-Voltage in HVdc Circuit Breaker Applications
An IGBT Current Boosting Method by Using Ultrahigh Driving-Voltage in HVdc Circuit Breaker Applications
复制标题
高压直流断路器应用中采用超高驱动电压的 IGBT 升流方法
DOI：
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发表时间：
2022
影响因子：
6.7
通讯作者：
Lvyang Chen
中科院分区：
文献类型：
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作者：
Jing;Guishu Liang;Xiangyu Zhang;Lei Qi;Lvyang Chen
基于电力电子技术的高压直流（HVdc）断路器通常需要大量绝缘栅双极晶体管（IGBT）来实现大容量开断。电流容量不足是直流断路器成本过高的重要原因。然而，断路器中的单一开关条件使得IGBT可以在短时间内控制数倍额定值的电流。本文提出了一种有效的 IGBT 电流升压方法。通过对器件的栅极施加非常规的超高驱动电压（UDV），可以显着提高 IGBT 的瞬时电流能力。还详细讨论了 UDV 可能引起的故障模式和寿命问题。通过综合理论计算和实验分析，提出了高压直流断路器中IGBT的合适UDV选择原则。经验证，单器件能够利用UDV在毫秒内控制31.2 kA电流。这一结论可以大大增加IGBT的允许工作面积，从而显着降低HVdc断路器的成本。
High-voltage direct current (HVdc) circuit breakers based on power electronic technology usually require a large number of insulated-gate bipolar transistors (IGBTs) to achieve large-capacity breaking. The insufficient current capacity is an important reason for the excessive cost of dc circuit breakers. However, the single switching condition in the circuit breaker makes it possible for IGBTs to control the current of several times rated value in a short time. This article proposed an effective current boosting method for IGBT. By applying an unconventionally ultrahigh driving-voltage (UDV) to the gate of devices, the instantaneous current capability of IGBTs can be significantly improved. The possible failure modes and lifetime issues caused by UDV are also discussed in detail. Through comprehensive theoretical calculations and experimental analysis, a proper UDV selection principle for IGBTs in HVdc circuit breakers is proposed. The single device is verified to have the ability to control 31.2 kA current in milliseconds by using UDV. This conclusion can greatly increase the allowable working area of IGBTs, thereby significantly reducing the cost of HVdc circuit breakers.
影响因子：
6.7
作者：
A. Bryant;Shaoyong Yang;P. Mawby;D. Xiang;L. Ran;P. Tavner;P. Palmer
通讯作者：
A. Bryant;Shaoyong Yang;P. Mawby;D. Xiang;L. Ran;P. Tavner;P. Palmer