Near-infrared quantum cutting in YVO4:Yb3+ thin-films via downconversion

Near-infrared quantum cutting in YVO4:Yb3+ thin-films via downconversion
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通过下转换在 YVO4:Yb3 薄膜中进行近红外量子切割

DOI:
10.1016/j.optmat.2012.01.014
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发表时间:
2012-05
期刊:
影响因子:
3.9
通讯作者:
Wang, Yuyin
Wang, Yuyin
中科院分区:
材料科学3区
文献类型:
--
作者:
Cheng, Xuerui;Su, Lei;Wang, Yongqiang;Zhu, Xiang;Wei, Xiantao;Wang, Yuyin

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YVO_4:Yb ~(3+)薄膜中的近红外(NIR)量子切割(QC)是一种有效的近红外量子切割技术,它涉及到通过从基质到Yb ~(3+)离子的协同能量转移(CET),从吸收的紫外光子发射两个低能近红外光子(约980 nm)。详细研究了Yb 3+掺杂浓度对可见光和近红外发射、衰减寿命和量子效率的影响。结果表明,Yb 3+离子的最佳掺杂浓度为4mol%,其最大量子效率可达127.7%。此外,该薄膜显示出完美的透明性,在可见光和近红外区域是透明的。所获得的最大透明度可高达90%。所有这些结果进一步表明其作为用于增强硅太阳能电池性能的发光转换层的潜在应用。
An efficient near-infrared (NIR) quantum-cutting (QC) in YVO4:Yb3+films has been demonstrated, which involves the emission of two low-energy NIR photons (around 980nm) from an absorbed ultra-violet photon via a cooperative energy transfer (CET) from the host to Yb3+ions. The dependence of Yb3+doping concentration on the visible and NIR emissions, decay lifetime, and quantum efficiencies have been investigated in detail. The results show that the optimal concentration of Yb3+ions for NIR emission is 4mol%, and its maximum quantum efficiency approaches up to 127.7%. In addition, this film shows perfect transparency quality and is transparent in the visible and near infrared region. The maximum transparency obtained can reach as high as 90%. All these results further indicate its potential application as a luminescence converter layer for enhanced silicon solar cell performance.
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