Study on etching anisotropy of Si(hkl) planes in solutions with different KOH and isopropyl alcohol concentrations
Study on etching anisotropy of Si(hkl) planes in solutions with different KOH and isopropyl alcohol concentrations
复制标题
不同KOH和异丙醇浓度溶液中Si(hkl)面刻蚀各向异性研究
DOI：
10.2478/s13536-011-0047-z
复制
发表时间：
2011
影响因子：
1.1
通讯作者：
I. Zubel
中科院分区：
文献类型：
--
作者：
K. Rola;I. Zubel
本文研究了硅（hkl）晶片在含异丙醇的KOH溶液中的湿化学各向异性腐蚀。示出了KOH和醇浓度对（hkl）平面的蚀刻速率的影响。纯KOH溶液中KOH浓度的影响类似于用醇不饱和的KOH溶液中的影响，而不同于用异丙醇饱和的KOH溶液中的影响。蚀刻溶液中醇浓度的增加通常降低所选（hkl）平面的蚀刻速率。然而，当酒精浓度达到饱和水平时，（100）和（311）蚀刻速率增加。这是很难解释的，因为增加的醇浓度应引起增强的吸附的醇分子在Si表面上，它是建议通过表面张力测量。因此，较致密的吸附层应导致蚀刻速率降低。异丙醇浓度对（hkl）表面形貌的影响也进行了研究。醇浓度的增加导致（100）和（h11）表面上的小丘消失。
AbstactThe paper deals with wet chemical anisotropic etching of Si(hkl) wafers in KOH solutions containing isopropyl alcohol. The impact of KOH and alcohol concentrations on the etch rates of (hkl) planes is shown. The effect of KOH concentration in pure KOH solutions resembles the one in KOH solutions non-saturated with alcohol and is different from the one in KOH solutions saturated with isopropanol. The increase in alcohol concentration in the etching solution generally reduces the etch rates of the selected (hkl) planes. However, when the alcohol concentration reaches the saturation level, the (100) and (311) etch rates increase. This is difficult to explain since the increased alcohol concentration should cause enhanced adsorption of the alcohol molecules on Si surface, as it is suggested by surface tension measurements. Thus, the denser adsorption layer should lead to the etch rate reduction. The influence of isopropanol concentration on the morphology of the (hkl) surfaces is also studied. The increase in the alcohol concentration leads to disappearance of hillocks on (100) and (h11) surfaces.
影响因子：
2.3
作者：
Gosalvez, M. A.;Sato, K.;Tanaka, H.
通讯作者：
Tanaka, H.