Charge transport in GaAs nanowires: interplay between conductivity through the interior and surface conductivity

Charge transport in GaAs nanowires: interplay between conductivity through the interior and surface conductivity
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GaAs 纳米线中的电荷传输:内部电导率和表面电导率之间的相互作用

DOI:
10.1088/1361-648x/aaf515
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发表时间:
2019
期刊:
Journal of Physics: Condensed Matter
影响因子:
--
通讯作者:
Voigtländer
Voigtländer
中科院分区:
--
文献类型:
--
作者:
Nägelein;Steidl;Cherepanov;Kleinschmidt;Hannappel;Voigtländer

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通过GaAs纳米线,部分p掺杂和部分本征的电荷输运,分析了四点电阻分布沿着独立的纳米线使用multip-STM。未掺杂段中的电荷传输通道被分配给表面电导率,而纳米线的内部是p掺杂段中的电导通道。详细研究了纳米线内部传导和表面态传导之间的复杂相互作用。测量的I-V曲线沿着的纳米线提供了实验基础,为建议的电荷传输模型的过渡的导电从内部到表面的纳米线。沿表面态导电沟道的电压降沿着导致表面处的带边向上移位。对于较高的施加电压,这导致耗尽层的去除和纳米线内部与表面态之间的电导沟道的开口。
The charge transport through GaAs nanowires, partially p-doped and partially intrinsic, is analyzed by four-point resistance profiling along freestanding nanowires using a multip-STM. The charge transport channel in the undoped segment is assigned to the surface conductivity, while the interior of the nanowire is the conductance channel in the p-doped segment. The convoluted interplay between conduction through the interior of the nanowire and surface state conduction is studied in detail. Measurements of the I–V curves along the nanowires provide the experimental basis for the proposed charge transport model for the transition of the conduction from the interior to the surface of the nanowire. A voltage drop along the surface state conduction channel leads to an upward shift of the band edges at the surface. This results, for higher applied voltages, in the removal of the depletion layer and an opening of a conductance channel between the interior of the nanowire and the surface states.
DOI: 10.1002/pssa.2210560236
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影响因子: --
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