Transient liquid phase sintering of tantalum carbide ceramics by using silicon as the sintering aid and its effects on microstructure and mechanical properties
Transient liquid phase sintering of tantalum carbide ceramics by using silicon as the sintering aid and its effects on microstructure and mechanical properties
复制标题
以硅为烧结助剂的碳化钽陶瓷瞬态液相烧结及其对显微组织和力学性能的影响
DOI：
10.1016/j.matchemphys.2014.10.052
复制
发表时间：
2015-01
影响因子：
4.6
通讯作者：
Feng Ye
中科院分区：
文献类型：
--
作者：
Christian Worsch;Jesus Gonzalez;Andre Springer;Feng Ye
碳化钽复合材料，具有0.76-8.85重量%通过放电等离子烧结（SPS）在1700 °C和30 MPa下烧结5分钟来制造作为烧结助剂的元素硅。研究了碳化钽复合材料的瞬时液相烧结行为、显微组织和力学性能。碳化钽颗粒表面上存在的氧化物杂质通过在1271 °C至1503 °C的温度范围内与元素硅反应而消除，以有利于致密化。然后，硅在其1413 °C的熔点温度下熔化以促进碳化钽颗粒的重排。在致密化结束时，元素硅在低于1773 °C的温度下与碳化钽反应，在固结陶瓷中转化为更难熔的TaSi 2和SiC。TaSi 2和SiC颗粒通过物理钉扎碳化钽晶粒的生长来提高致密化。当温度低于1650 °C时，硅化物发生脆性-韧性转变，蠕变流动导致硅化物进一步致密化。由于使用元素硅作为烧结助剂的良好效果，所有组合物均达到>96.7%的理论密度。固结材料中的平均晶粒尺寸随着硅的添加而从0.76wt.%的硅中的约19 μm减小。在8.85重量%的硅组分中，Si组成。在8.85wt.%的复合材料中，硅材料，由于全密度和精细的微观结构。
Tantalum carbide composites with 0.76–8.85 wt.% elemental silicon as a sintering aid were fabricated by spark plasma sintering (SPS) at 1700 °C and 30 MPa for 5 min. The transient-liquid-phase sintering behavior, the microstructures and the mechanical properties of the tantalum carbide composites were investigated. Oxide impurities present on the surfaces of the tantalum carbide particles were eliminated by reactions with the elemental silicon in a temperature range from 1271 °C to 1503 °C to benefit densification. Then the silicon melted at its melting point temperature of 1413 °C to facilitate rearrangement of the tantalum carbide particles. By the end of the densification, the elemental silicon transformed into more refractory TaSi2and SiC in the consolidated ceramics by reactions with the tantalum carbide at temperatures lower than 1773 °C. Both TaSi2and SiC particles improved densification by physically pinning growth of the tantalum carbide grains. Further densification was resulted from creep flow of the silicides after brittle-to-ductile transformation of the silicides at temperatures <1650 °C. Due to the good effects of using elemental silicon as the sintering aid, all the compositions reached densities >96.7% theoretical. The average grain sizes in the consolidated materials decreased with the silicon addition from about 19 μm in the 0.76 wt.% Si composition to about 9 μm in the 8.85 wt.% Si composition. A good flexural strength up to ∼709 MPa was reached in the 8.85 wt.% Si material due to full density and fine microstructure.
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DOI：
10.1016/j.jeurceramsoc.2010.10.036
发表时间：
2011-04-01
影响因子：
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作者：
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DOI：
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发表时间：
1995-11
影响因子：
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