25.5 A 320GHz phase-locked transmitter with 3.3mW radiated power and 22.5dBm EIRP for heterodyne THz imaging systems
25.5 A 320GHz phase-locked transmitter with 3.3mW radiated power and 22.5dBm EIRP for heterodyne THz imaging systems
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适用于外差太赫兹成像系统的 25.5 A 320GHz 锁相发射机，辐射功率为 3.3mW，EIRP 为 22.5dBm
DOI：
10.1109/isscc.2015.7063118
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
E. Afshari
中科院分区：
文献类型：
--
作者：
R. Han;Chen Jiang;A. Mostajeran;Mohammad Emadi;Hamidreza Aghasi;H. Sherry;A. Cathelin;E. Afshari
在过去几年中，使用固态集成电子器件的非电离太赫兹成像越来越受到关注。然而，目前有几个因素阻碍了完全集成成像系统的实施。由于缺乏高于 fmax 的低噪声放大，硅上太赫兹像素的灵敏度无法与毫米波或光波对应物相匹配。再加上之前传感器采用的焦平面阵列配置，需要非常大的照明源功率。之前关于硅的研究已经证明了 1mW 的辐射 [1,3]；但实用的成像系统需要更高的功率和能源效率。此外，外差成像方案被证明在提高检测灵敏度方面非常有效[4]。由于保留了相位信息，它还可以使用少量接收器单元进行数字波束形成。然而，这需要太赫兹源和接收器 LO 之间具有小频率偏移 (IF<;1GHz) 的锁相。在[5]中，报告了一个具有探测输出的 300GHz PLL。本文提出了一种使用 SiGe HBT 的 320GHz 发射机（图 25.5.1）。结合16个相干辐射器，这项工作实现了3.3mW的辐射功率和0.54%的DC-RF效率，这是最先进的硅太赫兹辐射器中最高的，如图25.5.6的比较表所示。同时，输出光束由完全集成的 PLL 锁相，从而实现高性能外差成像系统。
Non-ionizing terahertz imaging using solid-state integrated electronics has been gaining increasing attention over the past few years. However, there are currently several factors that deter the implementations of fully-integrated imaging systems. Due to the lack of low-noise amplification above fmax, the sensitivity of THz pixels on silicon cannot match that of its mm-Wave or light-wave counterparts. This, combined with the focal-plane array configuration adopted by previous sensors, requires exceedingly large power for the illumination sources. Previous works on silicon have demonstrated 1mW radiation [1,3]; but higher power, as well as energy efficiency, are needed for a practical imaging system. In addition, heterodyne imaging scheme was demonstrated to be very effective in enhancing detection sensitivity [4]. Due to the preservation of phase information, it also enables digital beam forming with a small number of receiver units. This however requires phase locking between the THz source and receiver LO with a small frequency offset (IF<;1GHz). In [5], a 300GHz PLL is reported with probed output. In this paper, a 320GHz transmitter using SiGe HBTs is presented (Fig. 25.5.1). Combining 16 coherent radiators, this work achieves 3.3mW radiated power with 0.54% DC-RF efficiency, which are the highest among state-of-the-art silicon THz radiators shown in the comparison table in Fig. 25.5.6. Meanwhile, the output beam is phase-locked by a fully-integrated PLL, which enables high-performance heterodyne imaging systems.
14 5 A 0 53THz 可重构源阵列，辐射功率高达 1mW，适用于 0 13μm SiGe BiCMOS 中的太赫兹成像应用
DOI：
10.1109/isscc.2014.6757424
发表时间：
2014
期刊：
2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)
影响因子：
--
作者：
U. R. Pfeiffer;Y. Zhao;J. Grzyb;R. Al Hadi;N. Sarmah;W. Förster;H. Rücker;B. Heinemann
通讯作者：
B. Heinemann
DOI：
10.1109/tthz.2011.2159559
发表时间：
2011-09-01
影响因子：
3.2
作者：
Friederich, Fabian;von Spiegel, Wolff;Roskos, Hartmut G.
通讯作者：
Roskos, Hartmut G.