Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO2)/TiO2 heterojunction semiconductors with varied Sb doping concentration
Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO2)/TiO2 heterojunction semiconductors with varied Sb doping concentration
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不同 Sb 掺杂浓度的锑掺杂氧化锡 (Sb-SnO2)/TiO2 异质结半导体的光生电荷分离效率提高
DOI:
10.1063/1.4894615
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发表时间:
2014-09
影响因子:
3.2
通讯作者:
Wenhai Ma, Yanli Mao*
中科院分区:
文献类型:
--
作者:
Zhenlong Zhang;Wenhai Ma, Yanli Mao*
In this paper, antimony-doped tin oxide (Sb-SnO2) nanoparticles were synthesized with varied Sb doping concentration, and the Sb-SnO2/TiO2 heterojunction semiconductors were prepared with Sb-SnO2 and TiO2. The separation efficiency of photoinduced charges was characterized with surface photovoltage (SPV) technique. Compared with Sb-SnO2 and TiO2, Sb-SnO2/TiO2 presents an enhanced separation efficiency of photoinduced charges, and the SPV enhancements were estimated to be 1.40, 1.43, and 1.99 for Sb-SnO2/TiO2 composed of Sb-SnO2 with the Sb doping concentration of 5%, 10%, and 15%, respectively. To understand the enhancement, the band structure of Sb-SnO2 and TiO2 in the heterojunction semiconductor was determined, and the conduction band offsets (CBO) between Sb-SnO2 and TiO2 were estimated to be 0.56, 0.64, and 0.98 eV for Sb-SnO2/TiO2 composed of Sb-SnO2 with the Sb doping concentration of 5%, 10%, and 15%, respectively. These results indicate that the separation efficiency enhancement is resulting from the energy level matching, and the increase of enhancement is due to the rising of CBO.
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影响因子:
3.9
作者:
Sher Bahadur Rawal;A. Chakraborty;Yong Joo Kim;H. Kim;W. Lee
通讯作者:
Sher Bahadur Rawal;A. Chakraborty;Yong Joo Kim;H. Kim;W. Lee
DOI:
10.1088/1755-1315/128/1/012086
发表时间:
2018-03
期刊:
IOP Conference Series: Earth and Environmental Science
影响因子:
--
作者:
C Y Yan;W. Yi;J. Xiong;J. Ma
通讯作者:
C Y Yan;W. Yi;J. Xiong;J. Ma
影响因子:
3.9
作者:
Liu Wei;C. Shifu
通讯作者:
Liu Wei;C. Shifu
影响因子:
3.3
作者:
Jing, Liqiang;Xin, Baifu;Fu, Honggang
通讯作者:
Fu, Honggang
DOI:
10.1007/s10854-005-6453-4
发表时间:
2005-02
期刊:
Journal of Materials Science: Materials in Electronics
影响因子:
--
作者:
Tae-Young Lim;Chang-Yeoul Kim;Bum-Suk Kim;B. Choi;K. Shim
通讯作者:
Tae-Young Lim;Chang-Yeoul Kim;Bum-Suk Kim;B. Choi;K. Shim