Nanowire gate all around-TFET-based biosensor by considering ambipolar transport.
Nanowire gate all around-TFET-based biosensor by considering ambipolar transport.
复制标题
DOI：
10.1007/s00339-021-04840-y
复制
发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Panda DK
中科院分区：
文献类型：
--
作者：
Reddy NN;Panda DK
This work investigated the performance of overlapped gate-on-drain of a gate all around-tunnel field-effect transistor (GAA-TFET) biosensors by considering the dielectric modulated technique by immobilizing the targeted biomolecules in the cavity region curved under the overlapped gate-on-drain. The nanowire GAA-TFET device shows excellent controllability over the channel and reduces leakage current to a greater extent. Here, we tried to make the ambipolar nature of the TFET, an advantage for the biosensor by detecting the biomolecule using variation of ambipolar current of TFET. Due to structural arrangement, the nanocavity under the overlapped gate region suppresses the ambipolar drain current by increasing the dielectric constant of the targeted biomolecules. The device can show a variation of 102 and 103 amount of sensitivity for the variation of dielectric constant from 1 to 5 and, compared with the other TFET structure, the proposed overlapped gate-on-drain GAA-TFET biosensor shows higher sensitivity and low leakage with a highly controlled channel.
登录
查看更多内容
影响因子：
3.1
作者：
Abdi, Dawit Burusie;Kumar, M. Jagadesh
通讯作者：
Kumar, M. Jagadesh
影响因子：
38.3
作者：
Im, Hyungsoon;Huang, Xing-Jiu;Choi, Yang-Kyu
通讯作者：
Choi, Yang-Kyu
影响因子：
10.8
作者：
Gao XP;Zheng G;Lieber CM
通讯作者：
Lieber CM
影响因子：
3.1
作者：
Bhattacharyya, Amit;Chanda, Manash;De, Debashis
通讯作者：
De, Debashis
DOI：
10.1002/jnm.2908
发表时间：
2021-05-30
影响因子：
1.6
作者：
Reddy, N. Nagendra;Panda, Deepak Kumar
通讯作者：
Panda, Deepak Kumar