Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures
Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures
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铋掺入对 GaAsBi/GaAs 异质结构复合机制的影响
DOI：
10.1007/s10854-023-09839-0
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Batool Z
中科院分区：
文献类型：
--
作者：
Batool Z
本文报道了GaAs衬底上厚度为30-40 nm的GaAs 1-xBix（2.3% <x< 10.4%）外延层的激光激发功率依赖的光致发光（PL）研究。当用作半导体激光器中的光学有源区时，这种材料提供了抑制限制效率的俄歇复合损耗和改善电信范围（1.3-1.5 μm）的激光器性能的可能性。这些对GaAsBi的实验研究使我们能够验证GaAs 1 − xBix在多大程度上提供了预测的优化能带结构，其次是提供了这种能带结构对光学效率和载流子复合过程影响的第一个证据。分析了激发功率对PL强度的影响，以确定GaAs 1 − xBix合金中的复合机制。对铋浓度约为8.5%和1.4%的样品进行温度调谐，为抑制这种材料系统中的俄歇复合损耗提供了初步证据，突出了其在高效电信激光应用中的潜力。
This paper reports on laser excitation power dependent photoluminescence (PL) studies on epitaxial GaAs1−xBix(2.3% <x< 10.4%) layers with thicknesses of 30–40 nm which are compressively strained onto GaAs substrates. Such materials when used as optical active regions in semiconductor lasers offer the possibility of suppressing the efficiency-limiting Auger recombination losses and improving laser performance in the telecommunication range (1.3–1.5 μm). These experimental investigations on GaAsBi allow us to verify the extent to which GaAs1−xBixprovides the optimised band structure as predicted, and secondly to provide the first evidence of the influence of this band structure on optical efficiency and carrier recombination processes. An analysis of the dependence of PL intensity on excitation power was employed to identify the recombination mechanisms in GaAs1−xBixalloys. Temperature tuning the samples with bismuth concentration ~ 8.5% and 1.4% provides tentative evidence for the suppression of Auger recombination losses in this material system highlighting its potential for efficient telecoms laser applications.
半导体激光器中的光谱烧孔和增益饱和：强信号理论
DOI：
--
发表时间：
1988
期刊：
影响因子：
--
作者：
G. Agrawal
通讯作者：
G. Agrawal
影响因子：
3.7
作者：
Usman, Muhammad;Broderick, Christopher A.;O'Reilly, Eoin P.
通讯作者：
O'Reilly, Eoin P.