First principle study on the electronic and magnetic properties in Zn0.75Cr0.25M (M = S, Se, Te) semiconductors
First principle study on the electronic and magnetic properties in Zn0.75Cr0.25M (M = S, Se, Te) semiconductors
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Zn0.75Cr0.25M(M=S、Se、Te)半导体电子和磁性能的第一原理研究
DOI:
10.1016/j.jallcom.2012.06.017
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发表时间:
2012-10
影响因子:
6.2
通讯作者:
Zha, Gang-qiang
中科院分区:
文献类型:
--
作者:
Huang, Yu-hong;Jie, Wan-qi;Zha, Gang-qiang
Using the first-principle method, the structural, electronic and magnetic properties of Zn 0.75 Cr 0.25 M (M= S, Se, Te) have been investigated. The calculated formation energy and cohesive energy of Zn 0.75 Cr 0.25 M are negative and the absolute values of them decrease with the increase of atomic radius as well as the electronegativity of the anions. Zn 0.75 Cr 0.25 M display half-metallic characteristics with energy band gaps of 1.06, 0.65 and 0.83 eV, respectively. The conventional gaps for minority spin are 2.91, 2.16 and 1.75 eV for Zn 0.75 Cr 0.25 S, Zn 0.75 Cr 0.25 Se and Zn 0.75 Cr 0.25 Te respectively, which decrease with the increase of anion radius successively, similar to that observed in the binary compounds of ZnM. For all the three materials, exchange splitting energies Δ x (pd) due to the effect of Cr 3d state are negative, implying that the effective potential is more attractive for minority spin than that for majority spin, and the absolute value of Δ x (pd) decreases with the increase of atomic radius of anions. The calculated positive values of N 0 α suggest interactions between Zn-s and Cr-3d states are repulsive, while the negative values of N 0 β show that p–d interactions at the valence band are more attractive. All these conclusions demonstrate that Zn 0.75 Cr 0.25 M are promising candidates for practical applications in spintronics.
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影响因子:
3.7
作者:
R. McNorton;T. Schuler;J. M. Maclaren;R. Stern
通讯作者:
R. McNorton;T. Schuler;J. M. Maclaren;R. Stern
影响因子:
2.8
作者:
Mukesh Jain
通讯作者:
Mukesh Jain
影响因子:
5
作者:
N. Samarth;J. Furdyna
通讯作者:
N. Samarth;J. Furdyna
影响因子:
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作者:
Saito, H;Zayets, V;Ando, K
通讯作者:
Ando, K
DOI:
10.1088/0022-3727/40/21/045
发表时间:
2007-10
期刊:
Journal of Physics D: Applied Physics
影响因子:
--
作者:
Yong Liu;Banggui Liu
通讯作者:
Yong Liu;Banggui Liu