Magnetoresistive sensors based on the elasticity of domain walls

Magnetoresistive sensors based on the elasticity of domain walls
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基于磁畴壁弹性的磁阻传感器

DOI:
10.1088/1361-6528/aacd90
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发表时间:
2018-01
期刊:
影响因子:
3.5
通讯作者:
Weisheng Zhao
Weisheng Zhao
中科院分区:
材料科学3区
文献类型:
--
作者:
Xueying Zhang;Nicolas Vernier;Zhiqiang Cao;Qunwen Leng;Anni Cao;Dafine Ravelosona;Weisheng Zhao

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基于磁阻效应的磁传感器因​​其优异的灵敏度和集成度方面的优势,具有广阔的应用前景。然而,更高的灵敏度和更大的测量范围之间的竞争仍然是一个问题。在这里,我们提出了一种设计磁阻传感器的新机制:通过检测自旋阀或磁隧道结的自由层中弹性磁畴壁的扩张来探测垂直场。基于这种机制的设备的性能,例如灵敏度和测量范围,可以通过操纵设备的几何形状来调整。这可以在不改变材料固有特性的情况下实现,从而有望实现更高的集成度和更好的性能。根据实验结果对该机制进行了理论上的解释。提出了两个示例,并通过微磁仿真验证了它们的功能和性能。
Magnetic sensors based on magnetoresistance effects have promising application prospects due to their excellent sensitivity and their advantages in terms of integration. However, the competition between higher sensitivity and a larger measuring range remains a problem. Here, we propose a novel mechanism for designing magnetoresistive sensors: probing the perpendicular field by detecting the expansion of the elastic magnetic domain wall in the free layer of a spin valve or a magnetic tunnel junction. The performances of devices based on this mechanism, such as the sensitivity and the measuring range, can be tuned by manipulating the geometry of the device. This can be achieved without changing the intrinsic properties of the material, thus promising a higher integration level and a better performance. The mechanism is theoretically explained based on the experimental results. Two examples are proposed and their functionality and performances are verified via a micromagnetic simulation.
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发表时间: 2017-08
影响因子: 4.6
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