Mechanism for pillar-shaped surface morphology of polysilicon prepared by excimer laser annealing
Mechanism for pillar-shaped surface morphology of polysilicon prepared by excimer laser annealing
复制标题
准分子激光退火制备多晶硅柱状表面形貌机理
DOI：
10.1063/1.1288784
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
M. Chern
中科院分区：
文献类型：
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作者：
A. Shih;Chao;Si‐Chen Lee;M. Chern
研究了准分子激光退火制备的多晶硅的表面形貌。结果表明，准分子激光照射非晶硅薄膜时，晶态多晶硅表面会形成柱状结构。为了找出其机理，研究了激光功率密度、射针数和非晶硅厚度等制备参数。发现了几种中间模式，说明了柱的顺序形成。提出了一个表面张力模型来解释这些模式。该机制可用于制备平均尺寸为14.2 nm、平均高度为3.7 nm的自组装硅量子点。
Surface morphology of polycrystalline silicon prepared by excimer laser annealing has been investigated. It was found that when a thin amorphous Si film is irradiated by excimer laser, pillars are formed on the surface of the crystallized polysilicon. To find out the mechanism, various preparation parameters such as laser power densities, shot numbers and the thickness of the amorphous Si have been studied. Several intermediate patterns have been found which illustrate the sequential formation of pillars. A surface tension model is proposed to explain these patterns. This mechanism can be applied to prepare the self-assembled silicon quantum dots, whose average size and height are 14.2 and 3.7 nm, respectively.
以氢化微晶硅为初始薄膜的激光脱氢和激光晶化多晶硅TFT
DOI：
--
发表时间：
2009
期刊：
影响因子：
--
作者：
佐藤旦;梅津渉;山本健一;神原潤二;原明人;北原邦紀
通讯作者：
北原邦紀