Additional enhancement of electric field in surface-enhanced Raman Scattering due to Fresnel mechanism.

Additional enhancement of electric field in surface-enhanced Raman Scattering due to Fresnel mechanism.
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DOI:
10.1038/srep02335
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发表时间:
2013
期刊:
影响因子:
4.6
通讯作者:
Stoddart, Paul R.
Stoddart, Paul R.
中科院分区:
综合性期刊3区
文献类型:
--
作者:
Jayawardhana, Sasani;Rosa, Lorenzo;Juodkazis, Saulius;Stoddart, Paul R.

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表面增强拉曼散射 (SERS) 正在吸引越来越多的化学传感、表面科学研究的兴趣,并且作为纳米级等离子体工程中的一个有趣的挑战。多项研究表明,当通过透明基材而不是直接通过空气激发金属岛膜基材时,SERS 强度会增加。然而,据我们所知,这种额外增强的起源从未得到令人满意的解释。本文提出的有限差分时域模型表明,“远侧”激励下金属颗粒之间介电界面处的电场强度高于“近侧”激励。这与观察到的 SiO2 上银岛的增强相当一致。建模结果得到了基于界面处菲涅耳反射的简单分析模型的支持,这表明额外的 SERS 信号是由介电界面处的相移引起的电场近场增强引起的。
Surface-enhanced Raman scattering (SERS) is attracting increasing interest for chemical sensing, surface science research and as an intriguing challenge in nanoscale plasmonic engineering. Several studies have shown that SERS intensities are increased when metal island film substrates are excited through a transparent base material, rather than directly through air. However, to our knowledge, the origin of this additional enhancement has never been satisfactorily explained. In this paper, finite difference time domain modeling is presented to show that the electric field intensity at the dielectric interface between metal particles is higher for “far-side” excitation than “near-side”. This is reasonably consistent with the observed enhancement for silver islands on SiO2. The modeling results are supported by a simple analytical model based on Fresnel reflection at the interface, which suggests that the additional SERS signal is caused by near-field enhancement of the electric field due to the phase shift at the dielectric interface.
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