Electrical Properties of Pulsed Laser Crystallized Silicon Films
Electrical Properties of Pulsed Laser Crystallized Silicon Films
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脉冲激光晶化硅薄膜的电性能
DOI：
10.1143/jjap.38.1892
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发表时间：
1999
影响因子：
1.5
通讯作者：
A. Matsuda
中科院分区：
文献类型：
--
作者：
T. Sameshima;K. Saitoh;N. Aoyama;S. Higashi;M. Kondo;A. Matsuda
研究了掺磷激光晶化硅薄膜的电学特性。自由载流子光吸收分析表明，在360-375 mJ/cm 2的激光能量下形成的晶粒具有40-50 cm 2/Vs的高载流子迁移率，其接近于掺杂单晶硅的载流子迁移率。迁移率不依赖于激光脉冲的数量。另一方面，霍尔效应测量显示，当激光能量密度从160 mJ/cm 2增加到375 mJ/cm 2时，穿过晶界的电流的载流子迁移率从3 cm 2/Vs显著增加到28 cm 2/Vs。的霍尔迁移率也增加了激光脉冲的数量增加，虽然一个单一的脉冲照射导致的最大载流子迁移率为15厘米2/Vs。这些结果表明，高的激光能量密度以及多个脉冲的数量是必要的，以减少无序的非晶态和改善晶界特性。
Electrical properties of phosphorus-doped laser-crystallized silicon films were investigated. The analysis of free carrier optical absorption revealed that crystalline grains formed at laser energies of 360–375 mJ/cm2 had high carrier mobilities of 40–50 cm2/Vs, which were close to that of doped single crystalline silicon. The mobility did not depend on the number of laser pulses. On the other hand, Hall effect measurements showed a marked increase in the carrier mobility of electrical current traversing grain boundaries from 3 to 28 cm2/Vs as the laser energy density increased from 160 to 375 mJ/cm2. The Hall mobility also increased as the number of laser pulses increased, although a single pulse irradiation resulted in a maximum carrier mobility of 15 cm2/Vs. These results suggest that a high laser energy density as well as numbers of multiple pulses are necessary to reduce disordered amorphous states and improve grain boundary properties.
以氢化微晶硅为初始薄膜的激光脱氢和激光晶化多晶硅TFT
DOI：
--
发表时间：
2009
期刊：
影响因子：
--
作者：
佐藤旦;梅津渉;山本健一;神原潤二;原明人;北原邦紀
通讯作者：
北原邦紀