Investigation of Singlet Fission-Halide Perovskite Interfaces.
Investigation of Singlet Fission-Halide Perovskite Interfaces.
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调查单线裂变 - 半甲基钙钛矿界面。
DOI:
10.1021/acs.chemmater.1c04310
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发表时间:
2022-06-14
影响因子:
8.6
通讯作者:
Monserrat, Bartomeu
中科院分区:
文献类型:
--
作者:
Bowman, Alan R.;Stranks, Samuel D.;Monserrat, Bartomeu
A method for improving the efficiency of solar cells is combining a low-band-gap semiconductor with a singlet fission material (which converts one high-energy singlet into two low-energy triplets following photoexcitation). Here, we present a study of the interface between singlet fission molecules and low-band-gap halide pervoskites. We briefly present 150 experiments screening for triplet transfer into a halide perovskite. However, in all cases, triplet transfer was not observed. This motivated us to understand the halide perovskite–singlet fission interface better by carrying out first-principles calculations using tetracene and cesium lead iodide. We found that tetracene molecules/thin films preferentially orient themselves parallel to/perpendicular to the halide perovskite’s surface. This result is in agreement with simulations of tetracene (and other rodlike molecules) on a wide range of inorganic semiconductors. We present formation energies of all interfaces, which are significantly less favorable than for bulk tetracene, indicative of weak interaction at the interface. It was not possible to calculate excitonic states at the full interface due to computational limitations, so we instead present highly speculative toy interfaces between tetracene and a halide-perovskite-like structure. In these models, we focus on replicating tetracene’s electronic states correctly. We find that tetracene’s singlet and triplet energies are comparable to that of bulk tetracene, and the triplet is strongly localized on a single tetracene molecule, even at an interface. Our work provides new understanding of the interface between tetracene and halide perovskites, explores the potential for modeling excitons at interfaces, and begins to explain the difficulties in extracting triplets directly into inorganic semiconductors.
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影响因子:
2.8
作者:
Piland, Geoffrey B.;Burdett, Jonathan J.;Bardeen, Christopher J.
通讯作者:
Bardeen, Christopher J.
影响因子:
2.6
作者:
Janke, Svenja M.;Rossi, Mariana;Blum, Volker
通讯作者:
Blum, Volker
影响因子:
9.7
作者:
Saidi, Wissam A.;Shadid, Waseem;Castelli, Ivano E.
通讯作者:
Castelli, Ivano E.
影响因子:
15
作者:
Prasanna, Rohit;Gold-Parker, Aryeh;McGehee, Michael D.
通讯作者:
McGehee, Michael D.
影响因子:
4.4
作者:
DEXTER, DL
通讯作者:
DEXTER, DL