Ultra rapid fabrication of p-type Li-doped Mg2Si0.4Sn0.6 synthesized by unique melt spinning method
Ultra rapid fabrication of p-type Li-doped Mg2Si0.4Sn0.6 synthesized by unique melt spinning method
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独特熔体纺丝法超快速制备p型锂掺杂Mg2Si0.4Sn0.6
DOI:
10.1016/j.scriptamat.2015.12.031
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发表时间:
2016-04
影响因子:
6
通讯作者:
Zhou Xiaoyuan
中科院分区:
文献类型:
--
作者:
Tang Xiaodan;Wang Guiwen;Zheng Yong;Zhang Yumeng;Peng Kunling;Guo Lijie;Wang Shuxia;Zeng Min;Dai Jiyan;Wang Guoyu;Zhou Xiaoyuan
In this work, we successfully synthesizedp-type Mg2(1-x)Li2xSi0.4Sn0.6(x = 0.00, 0.01, 0.03, 0.07, 0.09) samples using a home-made melt spinning system combined with spark plasma sintering. Compared with the samples prepared by a traditional method, the processing time is reduced from typically several days to less than one hour. It is found that the electrical conductivity rises rapidly with the increase of Li content owing to the enhanced carrier density, while the Seebeck coefficient decreases concomitantly to some extent. Meanwhile, Li doping dramatically reduces the thermal conductivity, leading to an enhanced figure of merit ZT ~ 0.58 at 760 K.
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影响因子:
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通讯作者:
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