Ultra rapid fabrication of p-type Li-doped Mg2Si0.4Sn0.6 synthesized by unique melt spinning method

Ultra rapid fabrication of p-type Li-doped Mg2Si0.4Sn0.6 synthesized by unique melt spinning method
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独特熔体纺丝法超快速制备p型锂掺杂Mg2Si0.4Sn0.6

DOI:
10.1016/j.scriptamat.2015.12.031
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发表时间:
2016-04
期刊:
影响因子:
6
通讯作者:
Zhou Xiaoyuan
Zhou Xiaoyuan
中科院分区:
材料科学1区
文献类型:
--
作者:
Tang Xiaodan;Wang Guiwen;Zheng Yong;Zhang Yumeng;Peng Kunling;Guo Lijie;Wang Shuxia;Zeng Min;Dai Jiyan;Wang Guoyu;Zhou Xiaoyuan

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本文采用自行研制的熔体快淬系统和放电等离子烧结相结合的方法成功地合成了p型Mg_(2(1-x))Li_(2 x)Si_(0.4)Sn_(0.6)(x = 0.00,0.01,0.03,0.07,0.09)样品。与传统方法制备的样品相比,处理时间从通常的几天减少到不到一个小时。结果表明,随着Li含量的增加,载流子密度增加,电导率迅速上升,而Seebeck系数有所下降。同时,Li掺杂显著降低了热导率,导致在760 K下的品质因数ZT ~ 0.58的提高。
In this work, we successfully synthesizedp-type Mg2(1-x)Li2xSi0.4Sn0.6(x = 0.00, 0.01, 0.03, 0.07, 0.09) samples using a home-made melt spinning system combined with spark plasma sintering. Compared with the samples prepared by a traditional method, the processing time is reduced from typically several days to less than one hour. It is found that the electrical conductivity rises rapidly with the increase of Li content owing to the enhanced carrier density, while the Seebeck coefficient decreases concomitantly to some extent. Meanwhile, Li doping dramatically reduces the thermal conductivity, leading to an enhanced figure of merit ZT ~ 0.58 at 760 K.
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