Light polarization characteristics of m-plane AlxGa1−xN films suffering from in-plane anisotropic tensile stresses
Light polarization characteristics of m-plane AlxGa1−xN films suffering from in-plane anisotropic tensile stresses
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m面AlxGa1−xN薄膜受面内各向异性拉伸应力的光偏振特性
DOI：
10.1063/1.3282705
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发表时间：
2010
影响因子：
3.2
通讯作者：
S. Chichibu
中科院分区：
文献类型：
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作者：
K. Hazu;T. Hoshi;M. Kagaya;T. Onuma;S. Chichibu
量化了受各向异性应力影响的m平面AlxGa1−xN外延层中近带边光学跃迁的偏振特性。采用氨源分子束外延和金属有机气相外延两种方法在m平面独立的GaN衬底上生长了外延层。在AlN摩尔分数x为0.25时，光的偏振方向由E⊥c变为E∥c，其中E是光的电场分量，⊥和∥分别表示垂直和平行。为了定量解释这一结果，利用Bir-Pikus哈密顿量计算了涉及三个独立价带的激子跃迁的能量和振子强度作为应变的函数。计算预测，对于0<；x≤1，最低能量跃迁(E1)被极化到垂直于表面(X3)的m轴，这意味着对于任何面内拉伸应变的AlxGa1−xN，基本上无法从表面法线检测到e1发射。那个.。
Polarization characteristics of the near-band-edge optical transitions in m-plane AlxGa1−xN epilayers suffering from anisotropic stresses were quantified. The epilayers were grown by both ammonia-source molecular beam epitaxy and metalorganic vapor phase epitaxy methods on an m-plane freestanding GaN substrate. The light polarization direction altered from E⊥c to E∥c at the AlN molar fraction, x, between 0.25 and 0.32, where E is the electric field component of the light and ⊥ and ∥ represent perpendicular and parallel, respectively. To give a quantitative explanation for the result, energies and oscillator strengths of the exciton transitions involving three separate valence bands were calculated as functions of strains using the Bir–Pikus Hamiltonian. The calculation predicted that the lowest energy transition (E1) is polarized to the m-axis normal to the surface (X3) for 0<x≤1, meaning that E1 emission is principally undetectable from the surface normal for any in-plane tensile strained AlxGa1−xN. The ...
影响因子：
1.5
作者：
K. Okamoto;H. Ohta;S. Chichibu;J. Ichihara;H. Takasu
通讯作者：
K. Okamoto;H. Ohta;S. Chichibu;J. Ichihara;H. Takasu