Terahertz imagers based on metamaterial structures monolithically integrated in standard CMOS technologies
Terahertz imagers based on metamaterial structures monolithically integrated in standard CMOS technologies
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基于单片集成在标准 CMOS 技术中的超材料结构的太赫兹成像器
DOI：
10.1117/12.2304335
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Gouveia L
中科院分区：
文献类型：
--
作者：
Gouveia L
硅互补金属氧化物半导体（CMOS）技术可以说是电子世界中最重要的资产。焦平面阵列（fpa）是低成本、大批量生产、紧凑和高分辨率成像器件革命的推动力之一。这些成像系统在可见光谱中的重要性突出了将其应用于其他重要电磁区域（如红外（IR）和太赫兹（THz））的必要性。太赫兹波的独特特性使其成为各种重要应用的理想选择，包括安全和医学成像，爆炸物和药物检测以及无损质量控制测试。这些应用是可能的，因为太赫兹辐射的非电离性质，它对许多非导电材料的透明度，以及大量物质的独特光谱指纹。由于缺乏紧凑、便携和室温操作的源和探测器，目前的太赫兹成像系统通常局限于实验室使用。因此，基于CMOS的太赫兹探测器的实现是推动低成本、室温、高分辨率、高灵敏度和便携式太赫兹成像系统开发的关键。在这里，我们提出了两种类型的太赫兹fpa的单片集成在一个标准的180纳米CMOS工艺制造。成像仪由太赫兹超材料（MM）吸收器耦合到微测热计，氧化钒（VOx）或硅pn二极管，与读出电子器件集成，形成64 x 64 CMOS fpa。通过捕获隐藏在马尼拉信封中的金属物体的图像，验证了太赫兹成像仪在传输模式下对隐藏物体进行距离成像的适用性。
Silicon complementary metal oxide semiconductor (CMOS) technologies are arguably the most important asset in the world of electronics. Focal plane arrays (FPAs) are one of the driving forces in the revolution of low-cost, mass produced, compact, and high-resolution imaging devices. The importance of these imaging systems in the visible spectrum has highlighted the need of their implementation into other significant electromagnetic regions such as infrared (IR) and Terahertz (THz). The unique characteristics of THz waves make them ideal for a variety of important applications ranging from security and medical imaging, explosive and drug detection, and non-destructive quality control testing. These applications are possible due to the non-ionizing nature of THz radiation, its transparency to many non-conductive materials, and distinctive spectroscopic fingerprints of a vast number of substances.Current THz imaging systems are usually restricted to laboratory use due the lack of compact, portable and roomtemperature operated sources and detectors. Therefore, the implementation of CMOS based THz detectors is key to promote the exploitation of low-cost, room-temperature, high-resolution, highly sensitive, and portable THz imaging systems. Here we present the monolithic integration of two types of THz FPAs fabricated in a standard 180 nm CMOS process. The imagers are composed of THz metamaterials (MM) absorbers coupled to a microbolometer, either vanadium oxide (VOx) or silicon pn diode, integrated with readout electronics to form 64 x 64 CMOS FPAs. The suitability of THz imagers for stand-off imaging of concealed objects was demonstrated in transmission mode by capturing images of metallic objects hidden in a manila envelope.
CEA-Leti 开发的基于天线耦合测辐射热计或 FET 的太赫兹实时成像非制冷阵列
DOI：
10.1007/s10762-015-0197-x
发表时间：
2015
期刊：
Journal of Infrared, Millimeter, and Terahertz Waves
影响因子：
--
作者：
F. Simoens;J. Meilhan;J. Nicolas
通讯作者：
J. Nicolas
影响因子：
3.6
作者：
Grant, J.;McCrindle, I. J. H.;Cumming, D. R. S.
通讯作者：
Cumming, D. R. S.
DOI：
10.1109/tthz.2015.2463673
发表时间：
2015-11-01
影响因子：
3.2
作者：
Carranza, Ivonne Escorcia;Grant, James;Cumming, David R. S.
通讯作者：
Cumming, David R. S.