Interplay of cross-plane polaronic transport and resistive switching in Pt–Pr0.67Ca0.33MnO3–Pt heterostructures
Interplay of cross-plane polaronic transport and resistive switching in Pt–Pr0.67Ca0.33MnO3–Pt heterostructures
复制标题
PtâPr0 67Ca0 33MnO3âPt 异质结构中跨平面极化子输运和电阻切换的相互作用
DOI：
10.1088/1367-2630/15/10/103008
复制
发表时间：
2013
影响因子：
3.3
通讯作者：
Ch. Jooss
中科院分区：
文献类型：
--
作者：
M. Scherff;J. Hoffmann;B.-U. Meyer;T. Danz;Ch. Jooss
金属氧化物三明治结构在不同电阻状态下的跨平面电输运机制的识别对于深入了解电阻开关（RS）机制至关重要。本文系统研究了Pr0.67Ca0.33MnO3（PCMO）薄膜夹在贵金属Pt电极之间的跨平面电输运性质。我们观察到三种不同的运输制度：欧姆，非线性和RS。非线性区域与庞磁阻（CMR）和庞电阻（CER）效应有关。与RS相反，CMR和CER是挥发性电阻效应，仅在施加强磁场或电场时持续存在，并且仅限于低温。在低电流密度下，器件电阻主要由PCMO膜的小极化子跳跃传输决定。在较高的电流密度附近的开关阈值，界面电阻开始占主导地位，显着也表现出热激活的传输特性。我们的研究还揭示了巨大的电阻效应和RS的相互作用：在低温下，RS只能通过降低的PCMO电阻率通过CMR和CER。这清楚地证明了电流密度对于控制非易失性电阻变化的幅度的关键作用。相反，CMR可以用作开关引起的无序和相关性变化的探针。在小的开关振幅，我们观察到轻微的变化，极化子活化能，这可以归因于在界面处的变化。如果开关幅度超过1000%以上，则器件中的CMR效应可以可逆地改变。这表明PCMO膜内大区域的电子或晶格结构的持续变化。
The identification of the cross-plane electric transport mechanisms in different resistance states of metal–oxide sandwich structures is essential for gaining insights into the mechanisms of resistive switching (RS). Here, we present a systematic study of cross-plane electric transport properties of Pr 0.67 Ca 0.33 MnO 3 (PCMO) thin films sandwiched by precious Pt metal electrodes. We observe three different transport regimes: ohmic, nonlinear and RS. The nonlinear regime is associated with colossal magneto-resistance (CMR) and colossal electro-resistance (CER) effects. In contrast to RS, the CMR and CER are volatile resistance effects which persist only during application of strong magnetic or electric fields and they are restricted to low temperatures. At low current densities, the device resistance is dominated by small polaron hopping transport of the PCMO film. At higher electric current densities near the switching threshold, the interface resistance starts to dominate and remarkably also exhibits thermally activated transport properties. Our studies also shed light onto the interplay of colossal resistance effects and RS: at low temperatures, RS can be only induced by reduction of the PCMO resistivity through CMR and CER. This clearly demonstrates the key role of the current density for controlling the amplitude of non-volatile resistive changes. Conversely, the CMR can be used as a probe for the switching induced changes in disorder and correlations. At small switching amplitudes, we observe slight changes in polaron activation energy which can be attributed to changes at the interface. If the switching amplitude exceeds 1000% and more, the CMR effect in the device can be reversibly changed. This indicates persistent changes in electronic or lattice structure of large regions within the PCMO film.
登录
查看更多内容
通过聚甲基丙烯酸甲酯掩模一步工艺纳米制造自旋转移力矩器件：巨磁阻与单层器件
DOI：
--
发表时间：
2006
期刊：
影响因子：
--
作者：
A. Parge;T. Niermann;M. Seibt;M. Munzenberg
通讯作者：
M. Munzenberg
勘误：由外部电场驱动的荷斯坦极化子的非平衡动力学[Phys。
影响因子：
3.7
作者：
L. Vidmar;J. Bonca;M. Mierzejewski;P. Prelovšek;S. Trugman
通讯作者：
S. Trugman
H. Böttger，V. V. Bryksin，固体中的跳频传导，VCH-Verlagsgesellschaft，Weinheim，Deerfield Beach-Florida 1985。398 Seiten，Preis：DM 140，—。
影响因子：
3.2
作者：
J. Kübler;K.‐H. Höck
通讯作者：
K.‐H. Höck
影响因子：
4
作者：
Sawa, A;Fujii, T;Tokura, Y
通讯作者：
Tokura, Y
脉冲激光沉积制备的Pr0.65Ca0.35MnO3薄膜电阻的温度依赖性
影响因子：
0.8
作者：
V. Prokhorov;G. Kaminsky;V. Flis;Y. P. Lee
通讯作者：
Y. P. Lee