High-temperature defect recovery in self-ion irradiated W-5 wt% Ta
High-temperature defect recovery in self-ion irradiated W-5 wt% Ta
复制标题
高温%20缺陷%20恢复%20in%20自离子%20辐照%20W-5%20wt%%20Ta
DOI：
10.1016/j.nme.2018.12.014
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发表时间：
2019
影响因子：
2.6
通讯作者：
Wan Farong
中科院分区：
文献类型：
--
作者：
Yi Xiaoou;Arakawa Kazuto;Du Yufeng;Ferroni Francesco;Han Wentuo;Liu Pingping;Wan Farong
本文研究了W-5wt%Ta合金在500 °C、1.2dpa、2 MeV的W ~+离子辐照下的高温缺陷恢复。在1200 °C下退火15 min后，损伤组织由随机分布的小环演变为大环、位错线和空洞的混合物。环的平均尺寸增加了2.4倍，达到17.7 nm，而数密度下降了一个数量级，达到15.3 × 1021 m −3。仅观察到b = 1/2的环<111>，并且它们被鉴定为完全间质型。这与在照过光的条件下存在1025%空位型1/2环形成鲜明对比<111>。在1200 °C下，空位/空位簇迁移加速，形成空洞，平均尺寸为12.5 nm，密度为15.1 × 1022 m-3。讨论了钽的作用。此外，W-5 Ta在自离子（这项工作）和质子辐照后的高温缺陷恢复（Ipatova等人，2017）进行了比较，在此基础上讨论了氢对缺陷演化的可能影响。
A study of high-temperature defect recovery has been carried out for W-5 wt% Ta alloy, irradiated with 2 MeV W+ions at 500 °C, up to 1.2 dpa. After post-irradiation annealing at 1200 °C for 15 min, the damage microstructure evolved from a random distribution of small loops to a mixture of large loops, dislocation lines and voids. The average size of loops increased by a factor of ∼4, up to 17.7 nm, whereas the number density dropped by an order of magnitude, to ∼5.3 × 1021m−3. Only loops withb= ½<111> were observed and they were identified to be exclusively interstitial type. This is in sharp contrast with the presence of ∼25% vacancy type ½<111> loops in the as-irradiated condition. Voids were formed as a result of accelerated vacancy/vacancy-cluster migration at 1200 °C, achieving an average size of ∼2.5 nm and a high density of ∼5.1 × 1022m−3. The role of tantalum is discussed. Furthermore, the high-temperature defect recovery in W-5Ta after self-ion (this work) and proton irradiations (Ipatova et al., 2017) are compared, based on which the possible influence of hydrogen upon defect evolution is discussed.
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影响因子：
2.6
作者：
S. Gonderman;J. Tripathi;T. J. Novakowski;T. Sizyuk;A. Hassanein
通讯作者：
S. Gonderman;J. Tripathi;T. J. Novakowski;T. Sizyuk;A. Hassanein
影响因子：
1.6
作者：
C. English;M. Jenkins
通讯作者：
C. English;M. Jenkins
影响因子：
3.3
作者：
Y. Zayachuk;M. 't Hoen;P. Zeijlmans van Emmichoven;I. Uytdenhouwen;G. Van Oost
通讯作者：
Y. Zayachuk;M. 't Hoen;P. Zeijlmans van Emmichoven;I. Uytdenhouwen;G. Van Oost
影响因子：
3.1
作者：
T. Matsui;S. Muto;T. Tanabe
通讯作者：
T. Matsui;S. Muto;T. Tanabe
影响因子：
3.1
作者：
Wurster, S.;Baluc, N.;Pippan, R.
通讯作者：
Pippan, R.