A simple determination method of in-plane Poisson’s ratio for MEMS materials by means of on-chip pure bending test
A simple determination method of in-plane Poisson’s ratio for MEMS materials by means of on-chip pure bending test
复制标题
片上纯弯曲测试MEMS材料面内泊松比的简易测定方法
DOI：
10.1109/memsys.2007.4433056
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
S. Inoue
中科院分区：
文献类型：
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作者：
T. Namazu;M. Tanaka;S. Inoue
介绍了一种测量薄膜材料面内泊松比的新方法。设计了片上纯弯曲试样，通过在加载杆上施加法向载荷，通过扭杆产生纯弯曲变形。在纯弯曲过程中，用光学干涉仪观察到薄膜样品离面方向轮廓线所对应的双曲线族干涉图样。薄膜试件的面内泊松比可由干涉线组成的双曲线的渐近线的夹角求得，而不考虑其它材料常数。测量的单晶硅（SCS）试样的泊松比平均为0.063，与分析值的偏差在2%以内。
This paper describes a novel and simple method for measuring in-plane Poisson's ratio of film materials. We designed on-chip pure-bending test specimen where pure-bending deformation can be produced via torsion bar by application of normal load to loading lever. During pure-bending, the interference pattern of a family of hyperbola, corresponding to the contour lines of a film specimen in the out-of-plane direction, is observed with optical interferometer. In-plane Poisson's ratio of a film specimen can be obtained from only the angle of asymptotes of hyperbola consisting of the interference lines, regardless of other material constants. The measured Poisson's ratio of single crystal silicon (SCS) specimen was 0.063 on average, in close agreement within 2 % deviation from analytical value.
通过 XRD 拉伸测试测量多晶氮化钛薄膜的机械性能
DOI：
--
发表时间：
2005
期刊：
IEEJ Transactions on Sensors and Micromachines 125・9
影响因子：
--
作者：
Takahiro Namazu;Shozo Inoue;Hideki Takemoto;Keiji Koterazawa
通讯作者：
Keiji Koterazawa