Study on the anisotropy of the secondary electron yield and resistance of the laser-etched copper
Study on the anisotropy of the secondary electron yield and resistance of the laser-etched copper
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激光刻蚀铜二次电子产额及电阻各向异性研究
DOI：
10.1016/j.apsusc.2021.150419
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发表时间：
2021-10
影响因子：
6.7
通讯作者：
Wang Yong
中科院分区：
文献类型：
--
作者：
Zhang Wenli;Wang Yigang;Wang Sihui;Fan Le;Wei Wei;Fang Jianwei;Li Weimin;Wang Yong
二次电子积累引起的电子云效应(e云)严重影响了现代加速器的性能。通过对现代加速器真空室内表面进行激光刻蚀，可以有效地消除这一问题。在这项工作中，无氧铜(OFC)的表面按照平行线或正方形栅格图案以不同的扫描速度进行了激光刻蚀。从不同角度测量了刻蚀的OFC样品的二次电子产额(SEYS)、电阻和粗糙度。经腐蚀的OFC样品表面形成规则排列的凹槽或锥体，其几何形状与刻蚀参数直接相关。结果表明，平行刻蚀样品表现出明显的各向异性。沿着平行线刻蚀的样品在垂直于槽线的方向上测量时，具有较高的SeS、电阻和粗糙度。而顺方栅刻蚀的样品在两个方向上差别不大，且SEY值低于平行刻蚀的样品。此外，低速刻蚀更有利于形成大的纵横比和孔隙率结构，有利于获得较低的SEY值。
The performance of modern accelerators has been seriously affected by the electron cloud effect (e-cloud) caused by the accumulation of secondary electrons. Such problem can be effectively eliminated by laser-etching the inner surface of the vacuum chambers of the modern accelerators. In this work, surfaces of oxygen-free copper (OFC) were laser etched following either parallel lines or square-grid pattern with different scanning speeds. The secondary electron yields (SEYs), resistance, and roughness of the etched OFC samples were measured from various directions. The surfaces of etched OFC samples have been proven to form some regularly arranged grooves or cones, the geometries of which are directly related to the etching parameters. As a result, the parallelly etched samples exhibit apparent anisotropy. The sample etched along parallel lines, present higher SEYs, resistance and roughness when measured in the direction perpendicular to the groove-lines. But the sample etched following square-grid have little difference in the two directions and have a lower SEY value than the parallelly etched samples. Moreover, low-speed etching is more favorable to producing large aspect ratio and porosity structures, which is conducive to obtain lower SEY values.
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DOI：
10.1116/6.0000952
发表时间：
2021-03
期刊：
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
影响因子：
--
作者：
Yigang Wang;Wenli Zhang;Sihui Wang;Wei Wei-Wei;Jian Fang;B. Zhu;Yong Wang
通讯作者：
Yigang Wang;Wenli Zhang;Sihui Wang;Wei Wei-Wei;Jian Fang;B. Zhu;Yong Wang
DOI：
10.1103/physreve.70.036501
发表时间：
2004-07
期刊：
Physical review. E, Statistical, nonlinear, and soft matter physics
影响因子：
--
作者：
L. Wang;M. Blaskiewicz;J. Wei;W. Weng;K. Ohmi;R. Macek
通讯作者：
L. Wang;M. Blaskiewicz;J. Wei;W. Weng;K. Ohmi;R. Macek
DOI：
10.1103/physrevstab.7.094401
发表时间：
2004-09
影响因子：
--
作者：
王九庆;国智元;刘瑜冬;秦庆;邢军;赵政;Jiuqing Wang;Z. Guo;Yd Liu;Q. Qin;J. Xing;Z. Zhao
通讯作者：
王九庆;国智元;刘瑜冬;秦庆;邢军;赵政;Jiuqing Wang;Z. Guo;Yd Liu;Q. Qin;J. Xing;Z. Zhao
DOI：
10.1103/physrevstab.11.041002
发表时间：
2008-04
影响因子：
--
作者：
W. Fischer;M. Blaskiewicz;J. Brennan;H. Huang;H. Hseuh;V. Ptitsyn;T. Roser;P. Thieberger;D. Trbojevic;J. Wei;S. Zhang;U. Iriso
通讯作者：
W. Fischer;M. Blaskiewicz;J. Brennan;H. Huang;H. Hseuh;V. Ptitsyn;T. Roser;P. Thieberger;D. Trbojevic;J. Wei;S. Zhang;U. Iriso
DOI：
10.1088/1742-6596/1350/1/012171
发表时间：
2019-05
期刊：
Journal of Physics: Conference Series
影响因子：
--
作者：
S. Bilgen;C. Bruni;B. Mercier;G. Sattonnay;V. Baglin
通讯作者：
S. Bilgen;C. Bruni;B. Mercier;G. Sattonnay;V. Baglin