Photoresist Shrinkage Caused by Single-Line Scan of Electron Beam
Photoresist Shrinkage Caused by Single-Line Scan of Electron Beam
复制标题
电子束单线扫描引起的光刻胶收缩
DOI：
10.1143/jjap.51.06fb10
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发表时间：
2012
影响因子：
1.5
通讯作者：
Junichi Tanaka
中科院分区：
文献类型：
--
作者：
T. Ohashi;Junichi Tanaka
观察到由电子束在光致抗蚀剂线上的单线扫描引起的收缩行为，包括在光致抗蚀剂线方向上的收缩分布。提出了一种评价单线扫描引起的微小收缩率及其分布的新方法。根据该方法的评价结果，在200、300和500 eV的着陆能量和8 pA的探测电流下，由单线扫描引起的约50 nm宽的光致抗蚀剂线的收缩小于0.1 nm。这种收缩比由标准二维扫描引起的典型收缩量小十倍以上。这一结果表明，在扫描电子显微镜测量过程中的光致抗蚀剂收缩显着减少的可能性。该评价方法还首次观察到光致抗蚀剂线方向上的收缩分布。结果表明，单线扫描引起的收缩分布在30 nm以上，比计算的电子散射范围要宽。这一结果表明，除了入射电子与光刻胶分子之间的微观相互作用之外，光刻胶收缩可能还涉及另外的机制。弹性弛豫效应和背散射电子的贡献是光致抗蚀剂收缩的合理的附加机制。
Shrinkage behavior caused by a single-line scan of an electron beam over a photoresist line was observed, including shrinkage distribution in the photoresist-line direction. A new method for evaluating the minute amount shrinkage and the shrinkage distribution caused by a single-line scan was developed. According to the results of evaluations with this method, the shrinkage of an about 50-nm-wide photoresist line caused by a single-line scan is less than 0.1 nm under landing energies of 200, 300, and 500 eV and probe current of 8 pA. This shrinkage is more than ten times smaller than the typical amount of shrinkage caused by a standard two-dimensional scan. This result indicates the possibility of a significant reduction of photoresist shrinkage during scanning-electron-microscope measurements. The evaluation method also yielded the first observation of the shrinkage distribution in the photoresist-line direction. The results show that the shrinkage caused by a single-line scan distributes more than 30 nm, which is wider than the calculated electron-scattering range. This result suggests that there likely to be an additional mechanism involved in photoresist shrinkage other than the microscopic interaction between incident electrons and photoresist molecules. An elastic-relaxation effect and a contribution of back-scattered electrons are plausible additional mechanisms for photoresist shrinkage.
酯基对聚甲基丙烯酸酯基质中质子产生和扩散的影响
DOI：
--
发表时间：
2004
期刊：
Japanese Journal of Applied Physics 43
影响因子：
--
作者：
A.Nakano;K.Okamoto;T.Kozawa;S.Tagawa
通讯作者：
S.Tagawa
化学放大型光刻胶酸碱平衡的研究
DOI：
--
发表时间：
2007
期刊：
Jpn. J. Appl. Phys.
影响因子：
--
作者：
K. Natsuda;T. Kozawa;K. Okamoto;S. Tagawa
通讯作者：
S. Tagawa