Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage
Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage
复制标题
镁注入垂直 GaN 结势垒肖特基整流器，具有低导通电阻、低导通电压和近乎理想的无损击穿电压
DOI：
10.1063/5.0106321
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发表时间：
2022
影响因子：
4
通讯作者：
T. Kachi
中科院分区：
文献类型：
--
作者：
M. Matys;Kazuki Kitagawa;T. Narita;T. Uesugi;J. Suda;T. Kachi
通过镁离子注入和随后的超高压退火进行选择性区域 p 型掺杂，实现了具有优异电气特性和无损击穿的垂直 GaN 结势垒肖特基 (JBS) 二极管。对在自支撑n型GaN衬底上生长的10μm厚的Si掺杂GaN漂移层进行Mg离子注入。我们制作了具有不同 n 型 GaN 沟道宽度 Ln = 1 和 1.5 μm 的 JBS 二极管。 JBS 二极管（取决于 Ln）表现出 0.57 至 0.67 mΩcm2 之间的导通电阻 (RON)，这是垂直 GaN 肖特基势垒二极管 (SBD) 的历史最低值，以及 660 至 675 V 之间的高击穿电压 (BV)（理想平行平面 BV 的 84.4%）。所获得的 JBS 二极管的低 RON 可以用 RON 模型很好地解释，该模型包括 n 型 GaN 沟道电阻、扩散电流效应和衬底电阻。 JBS 二极管的反向漏电流相对较低，比 GaN SBD 低 103-104 倍。此外，具有较低Ln的JBS二极管表现出比具有大Ln的JBS二极管显着更小的漏电流（高达反向偏压300 V），这是通过肖特基界面附近的电场减小来解释的。此外，JBS 二极管表现出 5.5kA/cm2 的极高电流密度、0.74V 的低导通电压，并且在反向电流快速增加约两个数量级时不会造成损坏。这项工作表明，GaN JBS 二极管可以成为低损耗功率开关应用的有力候选者。
Vertical GaN junction barrier Schottky (JBS) diodes with superior electrical characteristics and nondestructive breakdown were realized using selective-area p-type doping via Mg ion implantation and subsequent ultra-high-pressure annealing. Mg-ion implantation was performed into a 10 μm thick Si-doped GaN drift layer grown on a free-standing n-type GaN substrate. We fabricated the JBS diodes with different n-type GaN channel widths Ln = 1 and 1.5 μm. The JBS diodes, depending on Ln, exhibited on-resistance ( RON) between 0.57 and 0.67 mΩ cm2, which is a record low value for vertical GaN Schottky barrier diodes (SBDs) and high breakdown (BV) between 660 and 675 V (84.4% of the ideal parallel plane BV). The obtained low RON of JBS diodes can be well explained in terms of the RON model, which includes n-type GaN channel resistance, spreading current effect, and substrate resistance. The reverse leakage current in JBS diodes was relatively low 103–104 times lower than in GaN SBDs. In addition, the JBS diode with lower Ln exhibited the leakage current significantly smaller (up to reverse bias 300 V) than in the JBS diode with large Ln, which was explained in terms of the reduced electric field near the Schottky interface. Furthermore, the JBS diodes showed a very high current density of 5.5 kA/cm2, a low turn-on voltage of 0.74 V, and no destruction against the rapid increase in the reverse current approximately by two orders of magnitude. This work demonstrated that GaN JBS diodes can be strong candidates for low loss power switching applications.
影响因子：
4
作者：
Breckenridge, M. Hayden;Tweedie, James;Sitar, Zlatko
通讯作者：
Sitar, Zlatko
（特邀）垂直GaN超结器件之路
DOI：
10.1149/09806.0069ecst
发表时间：
2020
期刊：
ECS Transactions
影响因子：
--
作者：
Khachariya, Dolar;Szymanski, Dennis;Reddy, Pramod;Kohn, Erhard;Sitar, Zlatko;Collazo, Ramon;Pavlidis, Spyridon
通讯作者：
Pavlidis, Spyridon