Novel approach to improve reliable color recognition in a-Si:H photodiodes
Novel approach to improve reliable color recognition in a-Si:H photodiodes
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提高 a-Si:H 光电二极管颜色识别可靠性的新方法
DOI：
10.1117/12.918566
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
M. Böhm
中科院分区：
文献类型：
--
作者：
K. Watty;A. Bablich;K. Seibel;C. Merfort;M. Böhm
光学检测是识别潜在危险材料的一种常用技术。氢化非晶硅(a-Si：H)技术提供了一种与晶体硅相比廉价的替代材料，用于工作在可见光光谱中的光子器件。此外，材料的主要优点是高吸光率、电压可调的光谱灵敏度和高空间效率。目前的研究工作集中在a-Si：H光电二极管中颜色信息的测定上。这项工作提出了一种通过改变层序来提高a-Si：H光电二极管颜色识别率的方法。单层a-Si：H光电二极管的光谱响应(SR)的最大值可以通过改变其偏置电压来改变。在这种情况下，位移不超过几个纳米。精确的颜色识别需要不同的SR最大值(例如RGB模型)。实现SR分离的一种可能性是设计带隙；这里提出的另一种想法是基于层序列修改。正常情况下，反向偏置电压较高时的SR，在波长较长时达到最大值，会将较低电压下的SR包围起来。分离SR导致颜色识别的改进，并通过沉积额外的内阳极来实现。SR的最大移动量为100 nm，从接触内阳极的570 nm到顶阳极的670 nm。此外，曲线明显是分裂的。提出的方法将导致可调谐的多光谱光电二极管以实现高质量的颜色识别。这种二极管可以用于光子器件，例如用于安全和安保应用。
Optical detection is an often used technique for recognition of potentially dangerous materials. Hydrogenated amorphous silicon (a-Si:H) technology provides an inexpensive alternative material compared to crystalline silicon for being used in photonic devices operating in the visible spectrum. Further materials' key benefits are the high light absorption, the voltage-tunable spectral sensitivity and the high space efficiency. Present research efforts concentrate on the determination of the color information in a-Si:H photodiodes. This work presents an approach to improve color recognition of a-Si:H photodiodes by modifying the layer sequence. The maximum of the spectral response (SR) of a single i-layer a-Si:H photodiode can be shifted by varying its bias voltage. In this case, the shift is not more than some nanometers. Precise color recognition requires different SR maxima (e.g. RGB-model). One possibility to accomplish a separation of the SR is to engineer the bandgap; another idea, which is presented here, is based on a layer sequence modification. Normally, the SR at higher reverse bias voltages, with the maximum at longer wavelengths, encloses that at lower voltages. Splitting the SR leads to an improvement of color recognition and is achieved by depositing an additional interior anode. The SR maximum shift amounts to 100nm, from 570nm by contacting the interior anode, to 670nm at the top anode. Furthermore, the curves are clearly split. The presented approach should lead to a tunable multi-spectral photodiode for high quality color recognition. Such a diode can be used in photonic devices, e.g. for safety and security applications.
具有 ZnO:Al 前后触点的新型高动态 a-Si:H 多色针探测器
DOI：
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发表时间：
2011
期刊：
影响因子：
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作者：
A. Bablich;Krystian Watty;C. Merfort;K. Seibel;M. Boehm
通讯作者：
M. Boehm
三个氢化非晶硅光电二极管堆叠用于上述集成电路颜色传感器
DOI：
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发表时间：
2010
期刊：
影响因子：
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作者：
P. Gidon;B. Giffard;N. Moussy;P. Parrein;L. Poupinet
通讯作者：
L. Poupinet