Observation of carrier localization in cubic crystalline Ge(2)Sb(2)Te(5) by field effect measurement.
Observation of carrier localization in cubic crystalline Ge(2)Sb(2)Te(5) by field effect measurement.
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DOI：
10.1038/s41598-017-18964-w
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发表时间：
2018-01-11
影响因子：
4.6
通讯作者：
Miao XS
中科院分区：
文献类型：
--
作者：
Qian H;Tong H;He MZ;Ji HK;Zhou LJ;Xu M;Miao XS
退火过程中空位的可调无序性是晶态相变材料Ge_2Sb_2Te_5（GST）的一个重要特征。由不同无序度引起的各种电阻状态可以导致多级存储器件的发展，这将极大地提高存储密度并激发神经形态计算，从而给存储产业带来一场革命。本工作的重点是研究无序诱导的载体定位，这可能会导致多个电阻水平的结晶GST。为了分析载流子局域化对多个电阻水平的影响，测量了结晶GST的本征场效应（表面电导随施加的横向电场的变化），其中GST膜在不同温度下退火。场效应测量是对传统输运测量技术的重要补充。获得了场效应迁移率，并显示出温度激活，这是载流子定位的标志。基于场效应迁移率和退火温度之间的关系，我们证明了退火移动边缘向价带边缘，离域更多的载流子。多层晶态中载流子输运的研究对于多层相变存储的发展具有重要意义。
The tunable disorder of vacancies upon annealing is an important character of crystalline phase-change material Ge2Sb2Te5 (GST). A variety of resistance states caused by different degrees of disorder can lead to the development of multilevel memory devices, which could bring a revolution to the memory industry by significantly increasing the storage density and inspiring the neuromorphic computing. This work focuses on the study of disorder-induced carrier localization which could result in multiple resistance levels of crystalline GST. To analyze the effect of carrier localization on multiple resistant levels, the intrinsic field effect (the change in surface conductance with an applied transverse electric field) of crystalline GST was measured, in which GST films were annealed at different temperatures. The field effect measurement is an important complement to conventional transport measurement techniques. The field effect mobility was acquired and showed temperature activation, a hallmark of carrier localization. Based on the relationship between field effect mobility and annealing temperature, we demonstrate that the annealing shifts the mobility edge towards the valence-band edge, delocalizing more carriers. The insight of carrier transport in multilevel crystalline states is of fundamental relevance for the development of multilevel phase change data storage.
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DOI：
10.3390/ma10080862
发表时间：
2017-07-27
期刊：
Materials (Basel, Switzerland)
影响因子：
--
作者：
Wang JJ;Xu YZ;Mazzarello R;Wuttig M;Zhang W
通讯作者：
Zhang W
影响因子：
4.6
作者：
Kaes M;Salinga M
通讯作者：
Salinga M
影响因子：
4.6
作者：
Mio AM;Privitera SMS;Bragaglia V;Arciprete F;Cecchi S;Litrico G;Persch C;Calarco R;Rimini E
通讯作者：
Rimini E
影响因子：
56.9
作者：
Jeong, Jaewoo;Aetukuri, Nagaphani;Parkin, Stuart S. P.
通讯作者：
Parkin, Stuart S. P.
影响因子：
19
作者：
Jost, Peter;Volker, Hanno;Wuttig, Matthias
通讯作者：
Wuttig, Matthias