Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfaces
Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfaces
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氢对H端Si(100)表面初始氧化过程的影响
DOI：
10.1016/s0169-4332(96)00170-5
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发表时间：
1996
影响因子：
6.7
通讯作者：
Y. Yasuda
中科院分区：
文献类型：
--
作者：
H. Ikeda;K. Hotta;S. Furuta;S. Zaima;Y. Yasuda
用高分辨电子能量损失谱（HREELS）研究了室温下氢端Si（100）表面被原子氧初始氧化的过程。在具有1 × 1（二氢化物）结构的H端Si（100）表面上，发现在氧覆盖度θ小于1的范围内，存在两个氧化步骤。氧原子在Si <$O <$Si背键上的吸附在θ < 0.4的第一步中发生，对于Si <$O <$Si非对称伸缩模，具有约128 meV的恒定振动能，并且在θ > 0.4的第二步中可以观察到Si <$O <$Si振动能的增加。此外，在清洁表面的氧化的情况下，Si <$O <$Si的振动能随着氧覆盖度的增加而单调增加，并且在θ > 0.4时与H-终止表面上的振动能相同。据认为，从背键到表面Si <$H键的电荷转移促进了Si <$O <$Si键的结构弛豫。
The initial oxidation of H-terminated Si(100) surfaces by atomic oxygen at room temperature has been investigated by using high-resolution electron energy loss spectroscopy (HREELS). It has been found on H-terminated Si(100) surfaces with a 1 × 1 (dihydride) structure that there are two oxidation steps in the range of oxygen coverage, θ, less than unity. The adsorption of oxygen atoms on the SiSi back bond with a constant vibrational energy of about 128 meV for the SiOSi asymmetric stretching mode occurs in the first step of θ < 0.4, and an increase in the SiOSi vibrational energy can be observed in the second step θ > 0.4. Moreover, in the case of oxidation of clean surfaces, the SiOSi vibrational energy is monotonously increased with increasing oxygen coverage and is identical with that on H-terminated surfaces at θ > 0.4. It is considered that the structural relaxation of SiOSi bonds is promoted by a charge transfer from back bonds to surface SiH bonds.
影响因子：
4
作者：
HIGASHI, GS;CHABAL, YJ;RAGHAVACHARI, K
通讯作者：
RAGHAVACHARI, K