Demonstration of Single-Flux-Quantum 64-B Lookup Table With Cryo-CMOS Decoders for Reconfiguration

Demonstration of Single-Flux-Quantum 64-B Lookup Table With Cryo-CMOS Decoders for Reconfiguration
复制标题

使用 Cryo-CMOS 解码器进行重新配置的单通量量子 64-B 查找表演示

DOI:
10.1109/tasc.2022.3191984
复制
发表时间:
2022
影响因子:
1.8
通讯作者:
Yoshikawa Nobuyuki
Yoshikawa Nobuyuki
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Hironaka Yuki;Hosoya Takuya;Yamanashi Yuki;Yoshikawa Nobuyuki

文献摘要

参考文献

被引文献

相似文献

我们提出了一个紧凑的单通量量子(SFQ)查找表(LUT),使用CMOS解码器电路的重新配置,以提高可扩展性。通过外部控制电流重新配置。Ann× n位查找表由二维存储单元阵列和低温CMOS解码器组成。当从CMOS解码器施加相应的x和y方向控制电流时,目标地址处的存储器单元被设置为逻辑“1”状态,并且当施加复位电流时,被复位为逻辑“0”。Cryo-CMOS解码器与SFQ LUT集成,以减少用于LUT重新配置的室温电子器件的控制电流线的数量(从2n+1到2log 2n +2)。为了演示,我们设计并制作了一个64-B SFQ LUT与CMOS解码器集成使用AIST 2.5-kA/cm 2 Nb标准工艺和Rohm 180-nm CMOS工艺。实验结果证实了由CMOS解码器重新配置的SFQ LUT的正确功能。实验中所有操作的SFQ存储器单元显示出几乎相同的控制电流裕度。所提出的重新配置方法是可扩展的SFQ存储器单元的互连和控制电流裕度的数量。
We propose a compact single-flux-quantum (SFQ) lookup table (LUT) that uses CMOS decoder circuits for reconfiguration to improve scalability. Reconfiguration by external control currents. Ann×n-bit LUT is composed of a two-dimensional array of memory cells and cryo-CMOS decoders. The memory cell at the target address is set to a logic “1” state when the correspondingx- andy-directional control currents are both applied from the CMOS decoders and is reset to logic “0” when a reset current is applied. Cryo-CMOS decoders are integrated with the SFQ LUT to reduce the number of control current lines (from 2n+1 to 2log2n+2) from the room-temperature electronics for LUT reconfiguration. For demonstration, we designed and fabricated a 64-b SFQ LUT integrated with CMOS decoders using the AIST 2.5-kA/cm2Nb standard process and the Rohm 180-nm CMOS process. Experimental results confirm the correct functionality of the SFQ LUT reconfigured by the CMOS decoders. All operating SFQ memory cells in the experiment showed almost the same control current margins. The proposed reconfiguration method is scalable in terms of the number of interconnections and control current margins for SFQ memory cells.
用于位串行微处理器的基于高密度移位寄存器的快速单通量量子存储器系统
DOI: --
发表时间: 2016
影响因子: 1.8
作者:
Masamitsu Tanaka;R. Sato;Yuki Hatanaka;A. Fujimaki
通讯作者: A. Fujimaki
DOI: 10.1109/tasc.2013.2244634
发表时间: 2013-06-01
影响因子: 1.8
作者:
Holmes, Scott;Ripple, Andrew L.;Manheimer, Marc A.
通讯作者: Manheimer, Marc A.
DOI: 10.1109/tasc.2007.897387
发表时间: 2007
影响因子: 1.8
作者:
C. Fourie;H. van Heerden
通讯作者: H. van Heerden
DOI: 10.1109/tasc.2018.2797262
发表时间: 2018-03-01
影响因子: 1.8
作者:
Katam, Naveen Kumar;Mukhanov, Oleg A.;Pedram, Massoud
通讯作者: Pedram, Massoud
DOI: 10.1093/ietele/e91-c.3.318
发表时间: 2008
期刊: IEICE Trans. Electron.
影响因子: --
作者:
M. Hidaka;S. Nagasawa;K. Hinode;T. Satoh
通讯作者: T. Satoh