Photoconductive study and carrier dynamics of vertically aligned GaAs nanowires

Photoconductive study and carrier dynamics of vertically aligned GaAs nanowires
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垂直排列GaAs纳米线的光电导研究和载流子动力学

DOI:
10.1016/j.pnsc.2013.01.015
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发表时间:
2013-02
影响因子:
4.7
通讯作者:
Li, Tianxin
Li, Tianxin
中科院分区:
材料科学2区
文献类型:
--
作者:
Xia, Hui;Yao, Bimu;Lu, Zhenyu;Chen, Pingping;Li, Tianxin

文献摘要

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相似文献

单线器件通常用于研究半导体纳米线的电学和光电行为,然而在聚焦离子束和电子束作用下,纳米线的损伤和污染是不可避免的。这对于III-V族纳米线来说不是一个微不足道的因素,III-V族纳米线是高效太阳能收集和灵敏光电探测的候选者。在这项研究中,另一种方法来探测个别外延GaAs纳米线的光电导特性。对于样品制备,选择均匀的聚合物旋涂层作为垂直排列的NW结构的支撑介质;然后对样品进行适当的减薄和抛光,使NW尖端暴露,并达到所需的NW高度。采用外功率可调的激光器作为激发源,利用导电原子力显微镜测量了纳米线的暗特性和光电导特性。在垂直排列的GaAs NW中观察到了典型的肖特基型光电导行为,其光响应度远高于文献报道的单个NW光电探测器。最后,建立了基于实验装置的数值模型来模拟单个NW的光电行为。少数空穴寿命已被发现占主导地位的光电导的电流-电压特性的NW下的正样品偏压,并可以从实验的photo-IV曲线的定量拟合。
Single wire devices are generally fabricated to study the electrical and photoelectric behaviors of semiconductor nanowires (NWs); however detriment or contamination can hardly be avoided during manipulation of NWs under focused ion and electron beams. This could not be a trivial factor for III-V NWs which are candidates for high efficiency solar energy harvesting and sensitive photodetection. In this study an alternative way to probe the photoconductive property of individual epitaxial GaAs NWs is presented. For the sample preparation, a uniform spin-coated layer of polymer was selected to be the supporting medium for the vertically aligned NWs structure; then the adequate thinning and polishing of the sample exposed the NW tip and also achieved the required height of NW. An external power adjustable laser was introduced as the excitation source, and the dark and photoconductive current-voltage properties of individual NW were measured by the conductive atomic force microscopy. The typical Schottky style photoconductive behavior was observed in the vertically aligned GaAs NW, and its photoresponsivity has been found to be much higher than that of the reported for single NW photodetector. Finally, a numerical model based on the experimental setup was established to simulate the photoelectric behavior of individual NW. The minority hole lifetime has been found to dominate the photoconductive current-voltage properties of NW under the positive sample bias, and can be derived from the quantitative fitting of experimental photo-IV curves.
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发表时间: 2007-04-01
期刊: NANO LETTERS
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